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SBRS8190T3G-VF01

Onsemi

SBRS8190T3G-VF01 by Onsemi

SBRS8190T3G-VF01 by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.75V. It is designed for power applications, featuring a max reverse voltage of 90V and operating temperature range from -65 °C. The package style is small outline, making it suitable for surface mount configurations.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 30,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 30,000 parts In-Stock

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Vyrian

USA . 79 parts In-Stock

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$0.250

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79

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Flip Electronics

USA . 30,000 parts In-Stock

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Digiode

USA . 1,464 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Component Stockers USA

USA . 31,430 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kulean Microsystems

USA . 4,972 parts In-Stock

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TANS Electronics

Latvia . 2,013 parts In-Stock

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SupplyDigital Components

Austria . 1,192 parts In-Stock

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Problanco Electronics

Mexico . 1,118 parts In-Stock

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UHIMA Technologies

Türkiye . 875 parts In-Stock

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Corphita

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Overview

Discover the power of innovation with the SBRS8190T3G-VF01 by Onsemi. As a leader in the industry, Onsemi delivers top-quality diodes and rectifiers that are ideal for power applications. This single-configured, surface mount diode offers customers a reliable solution with a maximum output current of 2A and a maximum reverse voltage of 90V. With its advanced Schottky technology and matte tin finish, this product ensures optimal performance and efficiency. Trust Onsemi to provide you with the best-in-class components for all your power needs. Elevate your projects with the SBRS8190T3G-VF01 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring it can withstand harsh operating conditions.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting of the diode on a circuit board, saving space and improving efficiency.

Maximum Reverse Current: 500 uA

Low reverse current ensures efficient operation and helps prevent damage to the diode in case of reverse bias.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to integrate the diode into different circuit layouts and configurations.

No. of Terminals: 2

Having two terminals simplifies the connection process, making the diode more user-friendly.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs, making it suitable for applications with size constraints.

Application: POWER

Designed for power applications, ensuring reliable performance and efficient power handling capabilities.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows the diode to function in extreme environments without compromising performance.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections, improving compatibility and ease of use.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperatures for up to 30 seconds, ensuring durability during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature indicates resilience to heat stress, making the diode suitable for high-temperature environments.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures quality, reliability, and performance consistency for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting AC to DC, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.75 V

Low forward voltage drop minimizes power losses and improves efficiency in power conversion.

Maximum Output Current: 2 A

High output current capacity allows the diode to handle higher power loads and ensures reliable performance in demanding applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, making the diode suitable for high-frequency applications.

Terminal Form: J BEND

J bend terminal form facilitates easy and secure connections in various circuit configurations, enhancing reliability.

Maximum Repetitive Peak Reverse Voltage: 90 V

High reverse voltage rating provides protection against reverse voltage spikes and ensures long-term reliability in power applications.

Maximum Non Repetitive Peak Forward Current: 50 A

High non-repetitive peak forward current rating allows the diode to handle short-term power surges without damage, ensuring robust performance.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance, low leakage current, and high temperature stability, making it a durable choice for various applications.

Technical Specifications

Diodes & Rectifiers SBRS8190T3G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

500 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8190T3G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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