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SBRS140T3G

Onsemi

SBRS140T3G by Onsemi

SBRS140T3G by Onsemi is a Schottky rectifier diode with a reverse test voltage of 40V and max output current of 1A. Its small outline package makes it suitable for surface mount applications in various electronic circuits. With a peak reflow temperature of 260 °C, it ensures reliable performance even in harsh operating conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,878 parts In-Stock

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1,878

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Digiode

USA . 379 parts In-Stock

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379

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,299 parts In-Stock

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SupplyDigital Components

Austria . 4,046 parts In-Stock

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4,046

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Problanco Electronics

Mexico . 2,560 parts In-Stock

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2,560

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Corohmni

South Africa . 392 parts In-Stock

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392

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Corphita

USA . 330 parts In-Stock

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330

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Kulean Microsystems

USA . 322 parts In-Stock

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UHIMA Technologies

Türkiye . 29 parts In-Stock

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Overview

Unlock the power of reliable and efficient performance with the SBRS140T3G by Onsemi. As a leading manufacturer of diodes & rectifiers, Onsemi delivers top-notch quality and innovation in every product they create. The SBRS140T3G offers customers unparalleled value with its high reverse test voltage of 40V, maximum output current of 1A, and Schottky technology for improved efficiency. Whether used in automotive, industrial, or consumer electronics applications, this single-config diode is sure to exceed expectations and provide exceptional benefits to users. Choose Onsemi for superior quality and performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, ideal for a variety of applications.

Reverse Test Voltage: 40 V

With a high reverse test voltage of 40V, this diode can handle a wide range of electrical signals and protect circuits effectively.

Maximum Output Current: 1 A

The diode can handle a maximum output current of 1A, making it suitable for moderate power applications.

Technology: SCHOTTKY

Schottky diodes are known for their high switching speeds and low forward voltage drop, making this diode efficient and responsive in circuits.

Diode Element Material: SILICON

Silicon diodes are widely used in electronics due to their reliability and efficiency, ensuring a long lifespan for this diode.

Technical Specifications

Diodes & Rectifiers SBRS140T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS140T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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