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SBRS8130LT3G

Onsemi

SBRS8130LT3G by Onsemi

SBRS8130LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.445V and output current of 2A. It has a reverse test voltage of 30V, making it suitable for power applications. This diode comes in a small outline package with dual terminals and matte tin finish for surface mount assembly.

Median Price

$0.158

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.164

1k+ parts

$0.137

10k+ parts

$0.122

2,500

-

$0.164

$0.137

$0.122

Verical

USA . 2,500 parts In-Stock

1+ parts

-

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$0.152

2,500

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-

-

$0.152

Distributors (In-Stock)

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Digiode

USA . 2,329 parts In-Stock

1+ parts

$0.104

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2,329

$0.104

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Nova Conductors

Japan . 22 parts In-Stock

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$0.107

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22

$0.107

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Chip Stock

USA . 29,440 parts In-Stock

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29,440

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Vyrian

USA . 5,448 parts In-Stock

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5,448

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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R&J Components

USA . 285 parts In-Stock

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285

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 177,206 parts In-Stock

1+ parts

$0.093

100+ parts

-

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177,206

$0.093

-

-

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Corphita

USA . 2,036 parts In-Stock

1+ parts

$0.099

100+ parts

-

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2,036

$0.099

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Corohmni

South Africa . 322 parts In-Stock

1+ parts

$0.105

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322

$0.105

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Continental Prestige Electronics

USA . 4,695 parts In-Stock

1+ parts

$0.107

100+ parts

-

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$0.105

4,695

$0.107

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-

$0.105

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.107

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1,000

$0.107

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Argo Parts USA

USA . 898 parts In-Stock

1+ parts

$0.107

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$0.104

898

$0.107

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$0.104

Aztec Data Supply Inc.

USA . 4,116 parts In-Stock

1+ parts

$0.160

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4,116

$0.160

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AZTECH Wire

Italy . 827 parts In-Stock

1+ parts

$11.460

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827

$11.460

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Kepictronics

USA . 137,500 parts In-Stock

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137,500

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,936 parts In-Stock

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7,936

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SupplyDigital Components

Austria . 7,589 parts In-Stock

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7,589

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Perfect Parts

USA . 5,600 parts In-Stock

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5,600

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TANS Electronics

Latvia . 3,988 parts In-Stock

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3,988

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Problanco Electronics

Mexico . 714 parts In-Stock

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UHIMA Technologies

Türkiye . 201 parts In-Stock

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201

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Overview

Elevate your power applications with the SBRS8130LT3G by Onsemi. With a reputation for superior quality, Onsemi delivers reliable diodes and rectifiers that exceed industry standards. Perfect for power applications, this Schottky technology-based product offers a maximum forward voltage of 0.445V and a maximum output current of 2A, ensuring optimal performance. The SBRS8130LT3G is designed for convenience with its single configuration and small outline package style, making it easy to integrate into any project. Trust Onsemi to provide the best-in-class components for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the diode, making it suitable for various environments and applications.

Config: SINGLE

Single configuration allows for easy integration into circuits without the complexity of multiple diodes, simplifying the design process.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on circuit boards, saving time and space.

Maximum Reverse Current: 1000 uA

Low reverse current ensures efficient performance and minimizes power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and position the diode on the circuit board for optimal performance.

Reverse Test Voltage: 30 V

Suitable reverse test voltage helps in protecting the diode and ensures safe operation in the circuit.

No. of Terminals: 2

Having two terminals simplifies the connection process, making it easier to integrate into the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for efficient packing of components in a tight layout.

Application: POWER

Designed for power applications, this diode can handle high currents and voltages effectively.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures reliable performance in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable connections for long-term use.

Terminal Position: DUAL

Dual terminal position simplifies the connection process and allows for easy integration into various circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient soldering process without damaging the diode.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during soldering process, ensuring reliable connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.445 V

Low forward voltage drop ensures minimal power loss and efficient operation in the circuit.

Maximum Output Current: 2 A

High output current rating allows for handling of high power loads effectively.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching characteristics, suitable for high-frequency applications.

Terminal Form: J BEND

J bend terminal form facilitates easy and secure mounting on the PCB, ensuring reliable connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Sufficient peak reverse voltage rating ensures protection against reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 40 A

High peak forward current rating allows for handling of surge currents without damage to the diode.

Diode Element Material: SILICON

Silicon material provides good electrical properties and reliability for the diode's operation.

Technical Specifications

Diodes & Rectifiers SBRS8130LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.445 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8130LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-646-9023, 5961016469023

NIIN

016469023

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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