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SBRS8190NT3G

Onsemi

SBRS8190NT3G by Onsemi

SBRS8190NT3G by Onsemi is a Schottky rectifier diode with a max reverse voltage of 90V and forward voltage of 0.75V, ideal for power applications. It has a max output current of 2A and low reverse current of 500uA, making it suitable for high-power circuits in automotive electronics. The diode's small outline package with dual terminals and surface mount capability ensures easy integration into compact designs.

Median Price

$0.550

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,860 parts In-Stock

1+ parts

$0.550

100+ parts

$0.282

1k+ parts

$0.193

10k+ parts

$0.142

1,860

$0.550

$0.282

$0.193

$0.142

DigiKey

USA . 4,040 parts In-Stock

1+ parts

$0.560

100+ parts

$0.282

1k+ parts

$0.192

10k+ parts

$0.138

4,040

$0.560

$0.282

$0.192

$0.138

Flip Electronics (Authorized)

USA . 75,243 parts In-Stock

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75,243

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Verical

USA . 12,500 parts In-Stock

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$0.124

12,500

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$0.124

Distributors (In-Stock)

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Digiode

USA . 999 parts In-Stock

1+ parts

$0.418

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999

$0.418

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Vyrian

USA . 1,941 parts In-Stock

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$0.440

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1,941

$0.440

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Flip Electronics

USA . 12,743 parts In-Stock

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12,743

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,377 parts In-Stock

1+ parts

$0.396

100+ parts

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2,377

$0.396

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Corohmni

South Africa . 222 parts In-Stock

1+ parts

$0.440

100+ parts

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222

$0.440

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TANS Electronics

Latvia . 5,401 parts In-Stock

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5,401

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SupplyDigital Components

Austria . 5,164 parts In-Stock

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5,164

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Problanco Electronics

Mexico . 3,406 parts In-Stock

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3,406

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Kulean Microsystems

USA . 2,550 parts In-Stock

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2,550

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UHIMA Technologies

Türkiye . 802 parts In-Stock

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802

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Overview

Unleash the power of innovation with the SBRS8190NT3G by Onsemi. Crafted with precision and expertise, this diode & rectifier is a game-changer in the industry. With a focus on quality and reliability, Onsemi has created a product that exceeds expectations. Ideal for power applications, this device offers unmatched performance and efficiency. Experience the benefits of cutting-edge technology with the SBRS8190NT3G - your solution for superior power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and protection, making the diode long-lasting and reliable.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 500 uA

Low maximum reverse current ensures minimal power loss and efficient performance.

Application: POWER

Designed for power applications, this diode can handle high output currents and voltages with stability and reliability.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching capability, making this diode suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SBRS8190NT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

90 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8190NT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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