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SBRS8120NT3G

Onsemi

SBRS8120NT3G by Onsemi

SBRS8120NT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.6V. It is designed for power applications, featuring a reverse test voltage of 20V and max reverse current of 1000uA. This small outline package with dual terminals is ideal for high-speed switching circuits.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 11,745 parts In-Stock

1+ parts

$0.450

100+ parts

$0.239

1k+ parts

$0.162

10k+ parts

$0.100

11,745

$0.450

$0.239

$0.162

$0.100

Mouser Electronics

USA . 4,328 parts In-Stock

1+ parts

$0.450

100+ parts

$0.239

1k+ parts

$0.162

10k+ parts

$0.114

4,328

$0.450

$0.239

$0.162

$0.114

Flip Electronics (Authorized)

USA . 7,500 parts In-Stock

1+ parts

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7,500

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Verical

USA . 2,500 parts In-Stock

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$0.104

2,500

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-

$0.104

Distributors (In-Stock)

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Digiode

USA . 2,041 parts In-Stock

1+ parts

$0.428

100+ parts

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2,041

$0.428

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Vyrian

USA . 2,289 parts In-Stock

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$0.450

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2,289

$0.450

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Chip Stock

USA . 53,500 parts In-Stock

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53,500

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Flip Electronics

USA . 7,500 parts In-Stock

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7,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.384

100+ parts

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234

$0.384

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Corphita

USA . 2,098 parts In-Stock

1+ parts

$0.405

100+ parts

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2,098

$0.405

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,158 parts In-Stock

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7,158

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Kulean Microsystems

USA . 3,878 parts In-Stock

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3,878

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Problanco Electronics

Mexico . 3,031 parts In-Stock

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3,031

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SupplyDigital Components

Austria . 2,130 parts In-Stock

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2,130

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UHIMA Technologies

Türkiye . 826 parts In-Stock

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826

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TANS Electronics

Latvia . 298 parts In-Stock

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Overview

Looking for a reliable and high-quality diode for your power applications? Look no further than the SBRS8120NT3G by Onsemi. With its innovative Schottky technology, this single-config diode offers a maximum forward voltage of only 0.6V, ensuring efficient power delivery. Whether you're working on automotive electronics or industrial machinery, this rectifier diode is the perfect choice. Trust in Onsemi's reputation for excellence and choose the SBRS8120NT3G for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, making it suitable for various applications.

Reverse Test Voltage: 20 V

Suitable for low voltage applications, ensuring efficient performance.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching characteristics, making this product efficient for power applications.

Maximum Output Current: 1 A

Capable of handling moderate current loads, suitable for a range of power applications.

Surface Mount: YES

Easy to mount on PCBs, reducing assembly time and cost.

Technical Specifications

Diodes & Rectifiers SBRS8120NT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

20 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRS8120NT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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