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NRVBSS29FA

Onsemi

NRVBSS29FA by Onsemi

NRVBSS29FA by Onsemi is a Schottky rectifier diode with 90V reverse test voltage, 0.007us reverse recovery time, and 100uA reverse current. It is a single-configured diode in a small outline package suitable for efficiency applications at temperatures ranging from -55 to 150 °C.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 361,819 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.124

10k+ parts

$0.111

361,819

-

$0.150

$0.124

$0.111

Verical

USA . 361,819 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

361,819

-

-

-

$0.139

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 226 parts In-Stock

1+ parts

$0.117

100+ parts

-

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226

$0.117

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Vyrian

USA . 3,444 parts In-Stock

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3,444

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,181 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

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1,181

$0.111

-

-

-

Corohmni

South Africa . 274 parts In-Stock

1+ parts

$0.123

100+ parts

-

1k+ parts

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274

$0.123

-

-

-

AZTECH Wire

Italy . 444 parts In-Stock

1+ parts

$12.850

100+ parts

-

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444

$12.850

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-

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Problanco Electronics

Mexico . 5,415 parts In-Stock

1+ parts

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5,415

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TANS Electronics

Latvia . 4,228 parts In-Stock

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4,228

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Kulean Microsystems

USA . 2,877 parts In-Stock

1+ parts

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2,877

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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648

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SupplyDigital Components

Austria . 560 parts In-Stock

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560

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Overview

Discover the NRVBSS29FA by Onsemi, a high-quality rectifier diode that offers unparalleled efficiency in various applications. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for reliability and performance. With a maximum output current of 2A and a low forward voltage of 0.85V, this Schottky technology diode provides exceptional value to customers seeking a cost-effective solution. Whether you're looking to improve power efficiency or enhance circuit performance, the NRVBSS29FA is the ideal choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Reverse Recovery Time: 0.007 us

Ensures quick and efficient operation of the diode, reducing energy loss.

Diode Type: RECTIFIER DIODE

Suitable for efficiency applications, ensuring reliable performance.

Maximum Forward Voltage (VF): 0.85 V

Low forward voltage drop leads to minimal power loss and efficient operation.

Technical Specifications

Diodes & Rectifiers NRVBSS29FA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.007 us

Reverse Test Voltage:

90 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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