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FFSH3065B

Onsemi

FFSH3065B by Onsemi

FFSH3065B by Onsemi is a Schottky rectifier diode with 650V reverse test voltage and 37A output current. It has a max power dissipation of 268W, making it suitable for high-efficiency applications. With a temperature range from -55 to 175°C, this diode is ideal for various industrial uses.

Median Price

$5.139

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 19 parts In-Stock

1+ parts

$5.139

100+ parts

-

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19

$5.139

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Newark

USA . 180 parts In-Stock

1+ parts

$5.200

100+ parts

$3.940

1k+ parts

$3.590

10k+ parts

-

180

$5.200

$3.940

$3.590

-

Mouser Electronics

USA . 628 parts In-Stock

1+ parts

$6.590

100+ parts

$3.720

1k+ parts

$3.360

10k+ parts

-

628

$6.590

$3.720

$3.360

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DigiKey

USA . 514 parts In-Stock

1+ parts

$7.060

100+ parts

$4.055

1k+ parts

$2.912

10k+ parts

$2.902

514

$7.060

$4.055

$2.912

$2.902

Verical

USA . 4,050 parts In-Stock

1+ parts

-

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$2.950

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4,050

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$2.950

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EBV Elektronik

Germany . 720 parts In-Stock

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720

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Flip Electronics (Authorized)

USA . 243 parts In-Stock

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243

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Rochester

USA . 61 parts In-Stock

1+ parts

-

100+ parts

$2.900

1k+ parts

$2.590

10k+ parts

$2.440

61

-

$2.900

$2.590

$2.440

Arrow

USA . 30 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.950

10k+ parts

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30

-

-

$2.950

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,412 parts In-Stock

1+ parts

$3.068

100+ parts

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1,412

$3.068

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Vyrian

USA . 4,974 parts In-Stock

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4,974

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NAC Semi

USA . 570 parts In-Stock

1+ parts

-

100+ parts

$16.370

1k+ parts

$14.890

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570

-

$16.370

$14.890

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Flip Electronics

USA . 543 parts In-Stock

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543

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Distributors (Availability)

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Native Components

USA . 123 parts In-Stock

1+ parts

$0.128

100+ parts

-

1k+ parts

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10k+ parts

$0.123

123

$0.128

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-

$0.123

Northwest PG Solutions

USA . 1,407 parts In-Stock

1+ parts

$0.141

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$0.124

1,407

$0.141

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-

$0.124

Corphita

USA . 1,688 parts In-Stock

1+ parts

$2.907

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1,688

$2.907

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Corohmni

South Africa . 351 parts In-Stock

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$3.230

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351

$3.230

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Continental Prestige Electronics

USA . 353 parts In-Stock

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$4.760

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353

$4.760

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Microchip USA

USA . 9,758 parts In-Stock

1+ parts

$26.400

100+ parts

$26.030

1k+ parts

$25.840

10k+ parts

$25.650

9,758

$26.400

$26.030

$25.840

$25.650

SupplyDigital Components

Austria . 7,934 parts In-Stock

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7,934

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TANS Electronics

Latvia . 5,433 parts In-Stock

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Kulean Microsystems

USA . 3,721 parts In-Stock

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3,721

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Problanco Electronics

Mexico . 3,569 parts In-Stock

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3,569

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Perfect Parts

USA . 1,764 parts In-Stock

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1,764

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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508

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GreenTree Electronics

Israel . 285 parts In-Stock

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Authorized Procurement Solutions

USA . 205 parts In-Stock

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205

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Overview

Unleash the power of efficiency with the FFSH3065B by Onsemi. Crafted with precision and quality, this Schottky rectifier diode offers unparalleled performance and reliability. Whether you're looking to optimize energy usage or enhance your electronic systems, this product is the perfect solution. With a maximum output current of 37A and a maximum power dissipation of 268W, the FFSH3065B is designed to meet your needs while exceeding your expectations. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight, durable, and cost-effective, making the product easy to handle and transport.

Maximum Reverse Current: 40 uA

Low reverse current indicates high efficiency and minimal power loss in the circuit.

Reverse Test Voltage: 650 V

High reverse test voltage provides voltage protection and ensures reliable operation even under high voltage conditions.

Maximum Power Dissipation: 268 W

High power dissipation capability allows the product to handle large amounts of power without overheating, ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diodes are designed for high power applications and are known for their efficiency and low forward voltage drop, making them suitable for high-performance circuits.

Technology: SCHOTTKY

Schottky diodes have a lower forward voltage drop compared to standard diodes, resulting in reduced power loss and increased efficiency in the circuit.

Diode Element Material: SILICON CARBIDE

Silicon carbide is a high-performance material known for its stability at high temperatures and efficient power handling capabilities, making it ideal for demanding applications.

Technical Specifications

Diodes & Rectifiers FFSH3065B attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

37 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

268 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

FFSH3065B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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