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RHRP3060-F102

Onsemi

RHRP3060-F102 by Onsemi

RHRP3060-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 600V and max output current of 30A. It features an ultra-fast soft recovery time of 0.045us, making it ideal for hyper applications. With a max power dissipation of 125W and operating temperature range from -65 to 175°C, this diode is suitable for high-power electronic circuits.

Median Price

$1.084

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$1.084

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50

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Vyrian

USA . 2,974 parts In-Stock

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Digiode

USA . 2,417 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.217

100+ parts

$0.197

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$0.178

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450

$0.217

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$0.178

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Corohmni

South Africa . 386 parts In-Stock

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$1.062

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386

$1.062

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Continental Prestige Electronics

USA . 1,625 parts In-Stock

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$1.074

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$1.053

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$1.074

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$1.053

Argo Parts USA

USA . 934 parts In-Stock

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$1.074

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934

$1.074

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Netroflash

USA . 1,000 parts In-Stock

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$1.084

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Ampacity Inc.

Singapore . 683 parts In-Stock

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$2.010

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683

$2.010

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AZTECH Wire

Italy . 488 parts In-Stock

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$7.142

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QUARKTWIN TECHNOLOGY LTD

USA . 25,603 parts In-Stock

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TANS Electronics

Latvia . 5,953 parts In-Stock

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Kulean Microsystems

USA . 4,193 parts In-Stock

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SupplyDigital Components

Austria . 4,073 parts In-Stock

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Corphita

USA . 1,537 parts In-Stock

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Problanco Electronics

Mexico . 863 parts In-Stock

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UHIMA Technologies

Türkiye . 138 parts In-Stock

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Overview

Experience superior quality and reliability with the RHRP3060-F102 diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers exceptional products that meet the highest standards. This diode offers hyper ultra-fast soft recovery, making it perfect for a wide range of applications. With a maximum reverse test voltage of 600V and a maximum output current of 30A, this diode provides unmatched performance and efficiency. Trust Onsemi to deliver cutting-edge technology and innovation, ensuring that your projects run smoothly and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan and reliable performance.

Maximum Reverse Recovery Time: 0.045 us

Allows for fast switching and efficient operation, making it suitable for high-frequency applications.

Maximum Reverse Current: 250 uA

Low reverse current minimizes power loss and increases efficiency of the diode.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without compromising performance, suitable for a wide range of applications.

Maximum Power Dissipation: 125 W

High power dissipation capability allows the diode to handle large amounts of power without failure.

Technical Specifications

Diodes & Rectifiers RHRP3060-F102 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

HYPER ULTRA FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

2.1 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

325 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

125 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

250 uA

Maximum Reverse Recovery Time:

.045 us

Reverse Test Voltage:

600 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

RHRP3060-F102 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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