Loading...

NRVBSS22FA

Onsemi

NRVBSS22FA by Onsemi

The Onsemi NRVBSS22FA is a Schottky rectifier diode with a max reverse recovery time of 0.01 us and a max output current of 2A. It operates efficiently at temperatures ranging from -55 to 125 °C, making it suitable for various applications requiring high-speed switching and low forward voltage drop.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,464

-

-

-

-

Digiode

USA . 1,429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,429

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 80,668 parts In-Stock

1+ parts

$1.830

100+ parts

-

1k+ parts

-

10k+ parts

-

80,668

$1.830

-

-

-

AZTECH Wire

Italy . 706 parts In-Stock

1+ parts

$17.990

100+ parts

-

1k+ parts

-

10k+ parts

-

706

$17.990

-

-

-

Kulean Microsystems

USA . 5,807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,807

-

-

-

-

Problanco Electronics

Mexico . 5,699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,699

-

-

-

-

SupplyDigital Components

Austria . 4,874 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,874

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 3,666 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,666

-

-

-

-

Corphita

USA . 1,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,185

-

-

-

-

UHIMA Technologies

Türkiye . 969 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

969

-

-

-

-

Corohmni

South Africa . 303 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

303

-

-

-

-

TANS Electronics

Latvia . 297 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

297

-

-

-

-

Overview

Enhance your efficiency and power management with the NRVBSS22FA by Onsemi. This high-quality rectifier diode boasts a fast reverse recovery time of 0.01 us and maximum output current of 2 A, making it ideal for a wide range of applications. With a peak reflow temperature of 260 °C and AEC-Q101 reference standard compliance, this diode is built to last and perform under extreme conditions. Trust Onsemi's reputation for excellence and innovation to deliver the value and reliability you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it resistant to external elements and ensuring a longer lifespan.

Config: SINGLE

Simplified design with a single diode configuration, making it easy to integrate into various circuit layouts.

Surface Mount: YES

Enables easy and secure mounting on circuit boards, saving space and allowing for efficient assembly.

Maximum Reverse Recovery Time: 0.01 us

Fast recovery time ensures minimal power loss and improves overall efficiency of the diode.

Maximum Reverse Current: 400 uA

Low reverse current minimizes power dissipation and enhances the performance of the diode.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space within electronic devices.

Reverse Test Voltage: 20 V

Withstands up to 20 volts in reverse voltage, providing reliable protection against reverse voltage spikes.

No. of Terminals: 2

Simple 2-terminal connection for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package design saves space on PCBs and allows for densely packed circuit layouts.

Application: EFFICIENCY

Designed for applications that require high efficiency and reliability.

Maximum Operating Temperature: 125 °C

Operating temperature range allows for usage in a variety of environments without compromising performance.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures ensures functionality in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable and stable connection for optimal performance.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and ease of connection.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for reliable soldering during assembly.

Reference Standard: AEC-Q101

Complies with automotive electronic component standards, ensuring high quality and reliability.

Diode Type: RECTIFIER DIODE

Specifically designed as a rectifier diode for efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.5 V

Low forward voltage drop minimizes power loss and improves overall efficiency.

Maximum Output Current: 2 A

Capable of handling up to 2 amps of continuous output current for various applications.

Technology: SCHOTTKY

Schottky diode technology offers low forward voltage drop and fast switching speed for improved efficiency.

Terminal Form: FLAT

Flat terminal design for secure and stable connections in circuit applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

Capable of withstanding repetitive peak reverse voltage up to 20 volts for reliable performance.

Maximum Non Repetitive Peak Forward Current: 50 A

Provides high peak forward current handling capability for transient surge protection.

Diode Element Material: SILICON

Utilizes silicon as the diode element material for reliable and consistent performance.

Technical Specifications

Diodes & Rectifiers NRVBSS22FA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

400 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

20 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20