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RHRP30120-F102

Onsemi

RHRP30120-F102 by Onsemi

RHRP30120-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 1200V and max output current of 30A. It features hyperfast soft recovery technology, with a max reverse recovery time of 0.085us. Ideal for applications requiring high power dissipation up to 125W in environments ranging from -65°C to 175°C.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 579 parts In-Stock

1+ parts

$1.540

100+ parts

$1.450

1k+ parts

$1.310

10k+ parts

-

579

$1.540

$1.450

$1.310

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.968

100+ parts

-

1k+ parts

-

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10

$0.968

-

-

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Digiode

USA . 325 parts In-Stock

1+ parts

$1.463

100+ parts

-

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325

$1.463

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-

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Vyrian

USA . 6,973 parts In-Stock

1+ parts

-

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6,973

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 127 parts In-Stock

1+ parts

$0.030

100+ parts

-

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-

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127

$0.030

-

-

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Corohmni

South Africa . 238 parts In-Stock

1+ parts

$0.930

100+ parts

-

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238

$0.930

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-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.949

100+ parts

-

1k+ parts

$0.911

10k+ parts

-

1,000

$0.949

-

$0.911

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Continental Prestige Electronics

USA . 3,313 parts In-Stock

1+ parts

$0.968

100+ parts

-

1k+ parts

-

10k+ parts

$0.949

3,313

$0.968

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-

$0.949

Argo Parts USA

USA . 2,536 parts In-Stock

1+ parts

$0.968

100+ parts

-

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-

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2,536

$0.968

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Semicontronic

India . 244 parts In-Stock

1+ parts

$1.310

100+ parts

$1.277

1k+ parts

$1.271

10k+ parts

-

244

$1.310

$1.277

$1.271

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Corphita

USA . 2,270 parts In-Stock

1+ parts

$1.386

100+ parts

-

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2,270

$1.386

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Component Stockers USA

USA . 1,937 parts In-Stock

1+ parts

$1.590

100+ parts

$1.490

1k+ parts

$1.340

10k+ parts

-

1,937

$1.590

$1.490

$1.340

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Ampacity Inc.

Singapore . 226 parts In-Stock

1+ parts

$2.850

100+ parts

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226

$2.850

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AZTECH Wire

Italy . 870 parts In-Stock

1+ parts

$16.372

100+ parts

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870

$16.372

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TANS Electronics

Latvia . 7,976 parts In-Stock

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7,976

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Kulean Microsystems

USA . 7,430 parts In-Stock

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7,430

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Problanco Electronics

Mexico . 4,817 parts In-Stock

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4,817

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SupplyDigital Components

Austria . 3,524 parts In-Stock

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3,524

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QUARKTWIN TECHNOLOGY LTD

USA . 3,009 parts In-Stock

1+ parts

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100+ parts

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3,009

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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346

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Overview

Discover the unparalleled quality and reliability of the RHRP30120-F102 diode by Onsemi. As a leader in the industry, Onsemi is known for producing top-notch components that exceed expectations. Perfect for hyperfast soft recovery applications, this diode offers a wide range of benefits such as high power dissipation, low reverse current, and quick reverse recovery time. Trust Onsemi to deliver superior performance and efficiency with the RHRP30120-F102, making it the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the diode easy to handle and resistant to damage.

Maximum Reverse Recovery Time: 0.085 us

The quick reverse recovery time ensures efficient operation and reduces switching losses.

Maximum Reverse Current: 250 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Reverse Test Voltage: 1200 V

High reverse test voltage allows for reliable operation in high voltage applications.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes this diode suitable for a variety of environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin terminal finish provides good solderability and ensures reliable connections.

Maximum Power Dissipation: 125 W

High power dissipation capability allows the diode to handle elevated power levels without malfunctioning.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting alternating current to direct current with low forward voltage drop.

Maximum Forward Voltage (VF): 3.2 V

Low forward voltage drop minimizes power loss and heat generation, making the diode energy-efficient.

Maximum Output Current: 30 A

High output current rating allows the diode to handle heavy loads without overheating or failing.

Technology: AVALANCHE

Avalanche technology ensures reliable and safe operation, even under high voltage and current conditions.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating makes this diode suitable for high voltage applications where voltage spikes may occur.

Maximum Non Repetitive Peak Forward Current: 300 A

High non-repetitive peak forward current rating allows the diode to withstand short-duration overload conditions without damage.

Diode Element Material: SILICON

Silicon is a common semiconductor material that is known for its reliability and efficiency in diode applications.

Technical Specifications

Diodes & Rectifiers RHRP30120-F102 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, PD-CASE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

125 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

250 uA

Maximum Reverse Recovery Time:

.085 us

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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