Loading...

NRVTS8H120EMFST3G

Onsemi

NRVTS8H120EMFST3G by Onsemi

NRVTS8H120EMFST3G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 8A output current, and 0.85V forward voltage. It operates b/w -55 to 175 °C for efficiency applications. The package is small outline plastic with matte tin finish and dual terminals.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 61,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

61,000

-

-

-

-

Vyrian

USA . 11,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,876

-

-

-

-

Digiode

USA . 401 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

401

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,031 parts In-Stock

1+ parts

$17.990

100+ parts

-

1k+ parts

-

10k+ parts

-

1,031

$17.990

-

-

-

Kulean Microsystems

USA . 7,256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,256

-

-

-

-

SupplyDigital Components

Austria . 4,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,736

-

-

-

-

TANS Electronics

Latvia . 4,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,408

-

-

-

-

Problanco Electronics

Mexico . 3,633 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,633

-

-

-

-

Corphita

USA . 1,535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,535

-

-

-

-

iodParts Technologies Inc.

India . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

UHIMA Technologies

Türkiye . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

314

-

-

-

-

Corohmni

South Africa . 204 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

204

-

-

-

-

Overview

Discover the exceptional NRVTS8H120EMFST3G by Onsemi, a top-of-the-line rectifier diode designed to enhance efficiency in various applications. Manufactured with precision and reliability in mind, this Schottky diode offers a forward voltage of only 0.85V and an output current of 8A, making it ideal for a wide range of electronic systems. With a maximum repetitive peak reverse voltage of 120V, this diode guarantees superior performance and durability. Upgrade your projects with the NRVTS8H120EMFST3G and experience unparalleled quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Single configuration makes it easy to integrate into various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and quick assembly onto PCBs.

Maximum Reverse Current: 50 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to place and mount securely in electronic devices.

No. of Terminals: 5

Multiple terminals allow for versatile connections in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package design saves space on the PCB and reduces overall product size.

Application: EFFICIENCY

Designed for high efficiency applications, making it ideal for power management systems.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance in various environments.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures allows for use in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and prevents oxidation, ensuring good electrical connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connection options.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and integration.

Maximum Time At Peak Reflow Temperature (s): 30

Short exposure time at peak reflow temperature reduces the risk of damage to the diode during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures reliable soldering and assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current, suitable for power supply applications.

Maximum Forward Voltage (VF): 0.85 V

Low forward voltage drop ensures efficient power conversion and minimal energy loss.

Maximum Output Current: 8 A

High output current capability makes it suitable for applications with higher power requirements.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop for high efficiency.

Terminal Form: FLAT

Flat terminal form allows for easy soldering and secure connection in circuits.

Maximum Repetitive Peak Reverse Voltage: 120 V

High reverse voltage tolerance makes it suitable for applications requiring higher voltage handling.

Maximum Non Repetitive Peak Forward Current: 150 A

High peak forward current capability allows for handling of transient current spikes without damage.

Diode Element Material: SILICON

Silicon diode element material provides good electrical performance and reliability.

Technical Specifications

Diodes & Rectifiers NRVTS8H120EMFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE , LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS8H120EMFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20