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PCFFS30120AF

Onsemi

PCFFS30120AF by Onsemi

The Onsemi PCFFS30120AF is a Schottky rectifier diode with 1200V reverse test voltage and 30A max output current. Ideal for efficiency applications, it operates up to 175 °C, has a VF of 1.75V, and features surface mount configuration in a square package shape.

Median Price

$44.800

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 864 parts In-Stock

1+ parts

$44.800

100+ parts

$21.200

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$16.200

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864

$44.800

$21.200

$16.200

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Distributors (In-Stock)

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Digiode

USA . 2,006 parts In-Stock

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$42.560

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2,006

$42.560

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Chip Stock

USA . 38,000 parts In-Stock

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38,000

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Vyrian

USA . 5,299 parts In-Stock

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Flip Electronics

USA . 1,892 parts In-Stock

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1,892

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Distributors (Availability)

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AZTECH Wire

Italy . 926 parts In-Stock

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$20.740

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926

$20.740

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Corphita

USA . 1,507 parts In-Stock

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$40.320

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1,507

$40.320

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Corohmni

South Africa . 234 parts In-Stock

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$44.800

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234

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SupplyDigital Components

Austria . 4,510 parts In-Stock

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Kulean Microsystems

USA . 2,575 parts In-Stock

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TANS Electronics

Latvia . 2,416 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Problanco Electronics

Mexico . 1,635 parts In-Stock

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UHIMA Technologies

Türkiye . 135 parts In-Stock

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Overview

Experience the next level of efficiency with the PCFFS30120AF by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that exceed expectations. This SCHOTTKY technology diode offers a maximum output current of 30 A and a maximum reverse voltage of 1200 V, making it perfect for applications requiring high performance and reliability. Whether you're looking to enhance power conversion or improve system efficiency, the PCFFS30120AF provides the value and benefits you need to succeed. Elevate your projects with Onsemi's superior products today!

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the design and installation process, making it easier to integrate into various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during production.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and efficient operation of the diode, leading to better overall performance.

Package Shape: SQUARE

Square package shape provides a compact form factor, making it suitable for space-constrained applications.

Reverse Test Voltage: 1200 V

High reverse test voltage allows for reliable performance in high voltage applications, ensuring safety and durability.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting and integration, making it versatile for different usage scenarios.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy conservation and high performance are key priorities.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance enables reliable performance in demanding environments, ensuring stability and longevity.

Terminal Position: UPPER

Upper terminal position facilitates easy connectivity and installation, enhancing user-friendliness and convenience.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC, making this product suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage drop minimizes power loss and heat generation, improving efficiency and performance of the diode.

Maximum Output Current: 30 A

High maximum output current capacity allows the diode to handle large current loads, making it suitable for power electronics applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, enhancing the efficiency and performance of the diode.

Terminal Form: NO LEAD

No lead terminal form simplifies mounting and soldering processes, making it easier to handle and install the diode.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage ensures reliable operation in applications with fluctuating voltages or transient spikes.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high durability, efficiency, and temperature resistance, making it suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers PCFFS30120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

30 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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