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PCFFS20120AF

Onsemi

PCFFS20120AF by Onsemi

PCFFS20120AF by Onsemi is a Schottky rectifier diode with a max output current of 20A and a max reverse test voltage of 1230V. It is surface mountable and commonly used in applications requiring high efficiency.

Median Price

$5.570

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,911 parts In-Stock

1+ parts

-

100+ parts

$5.570

1k+ parts

$4.980

10k+ parts

$4.690

9,911

-

$5.570

$4.980

$4.690

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$17.485

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$17.485

-

-

-

Chip Stock

USA . 34,000 parts In-Stock

1+ parts

-

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34,000

-

-

-

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Flip Electronics

USA . 9,911 parts In-Stock

1+ parts

-

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9,911

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-

-

-

Vyrian

USA . 2,393 parts In-Stock

1+ parts

-

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-

1k+ parts

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2,393

-

-

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Digiode

USA . 1,295 parts In-Stock

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-

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1,295

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 36,351 parts In-Stock

1+ parts

$0.180

100+ parts

-

1k+ parts

-

10k+ parts

-

36,351

$0.180

-

-

-

Ampacity Inc.

Singapore . 873 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

873

$2.010

-

-

-

Semicontronic

India . 1,379 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

10k+ parts

-

1,379

$3.010

$2.935

$2.920

-

AZTECH Wire

Italy . 850 parts In-Stock

1+ parts

$15.263

100+ parts

-

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-

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850

$15.263

-

-

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Corohmni

South Africa . 438 parts In-Stock

1+ parts

$17.135

100+ parts

-

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438

$17.135

-

-

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Continental Prestige Electronics

USA . 2,021 parts In-Stock

1+ parts

$17.485

100+ parts

-

1k+ parts

-

10k+ parts

$17.135

2,021

$17.485

-

-

$17.135

Netroflash

USA . 50 parts In-Stock

1+ parts

$17.485

100+ parts

-

1k+ parts

$16.611

10k+ parts

$16.261

50

$17.485

-

$16.611

$16.261

Microchip USA

USA . 4,245 parts In-Stock

1+ parts

$52.830

100+ parts

-

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4,245

$52.830

-

-

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Component Stockers USA

USA . 468 parts In-Stock

1+ parts

$237.870

100+ parts

-

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468

$237.870

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-

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Problanco Electronics

Mexico . 8,368 parts In-Stock

1+ parts

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8,368

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TANS Electronics

Latvia . 6,061 parts In-Stock

1+ parts

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6,061

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SupplyDigital Components

Austria . 5,769 parts In-Stock

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5,769

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Kulean Microsystems

USA . 5,547 parts In-Stock

1+ parts

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5,547

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Argo Parts USA

USA . 3,747 parts In-Stock

1+ parts

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3,747

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

-

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UHIMA Technologies

Türkiye . 929 parts In-Stock

1+ parts

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929

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Corphita

USA . 794 parts In-Stock

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794

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-

Overview

Experience the next level of efficiency with the PCFFS20120AF by Onsemi. As a leader in diodes and rectifiers, Onsemi brings you a product that is designed for maximum performance and reliability. With its Schottky technology and Silicon Carbide diode element material, this rectifier diode offers unparalleled quality and durability. Its maximum output current of 20A ensures optimal power flow, while its maximum reverse test voltage of 1230V provides superior protection. Whether it's for industrial applications or personal projects, the PCFFS20120AF delivers exceptional value, benefits, and advantages. Upgrade to the best and experience the difference today.

Feature Benefit Bullets

Config: SINGLE

This product's single configuration makes it ideal for applications that require a simple and straightforward design.

Surface Mount: YES

With surface mounting capability, this diode/rectifier can be easily integrated into compact electronic devices, making it versatile and space-saving.

Maximum Reverse Current: 200 uA

The low maximum reverse current ensures efficient performance and minimal power loss, making this diode/rectifier an energy-efficient choice.

Package Shape: SQUARE

The square package shape allows for easy installation and secure mounting, making this diode/rectifier a convenient option for various applications.

Reverse Test Voltage: 1230 V

With a high reverse test voltage, this diode/rectifier offers reliable protection against reverse currents, ensuring the overall stability and durability of the circuit.

No. of Terminals: 1

Having only one terminal simplifies the use and installation of this diode/rectifier, making it suitable for applications with limited space or specific requirements.

Package Style (Meter): UNCASED CHIP

The uncased chip package style provides flexibility for custom mounting and integration, making this diode/rectifier suitable for space-constrained designs.

Application: EFFICIENCY

Designed for efficiency, this diode/rectifier is perfect for applications where energy consumption and performance optimization are key considerations.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode/rectifier can withstand demanding environments, ensuring reliable operation even in extreme conditions.

Terminal Position: UPPER

The upper terminal position simplifies the wiring and connection process, making this diode/rectifier easy to install and maintain.

Diode Type: RECTIFIER DIODE

This product's rectifier diode type allows it to efficiently convert alternating current (AC) into direct current (DC), making it suitable for power supply and voltage regulation applications.

Maximum Forward Voltage (VF): 1.723 V

The low maximum forward voltage ensures minimal voltage drop and high efficiency, making this diode/rectifier ideal for applications that require precise voltage control.

Maximum Output Current: 20 A

With a high maximum output current, this diode/rectifier can handle significant power loads, making it suitable for applications that demand a substantial current flow.

Technology: SCHOTTKY

The Schottky technology employed in this diode/rectifier ensures low forward voltage drop and fast switching performance, making it an excellent choice for high-frequency applications.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the assembly process and improves reliability, making this diode/rectifier ideal for automated manufacturing and harsh environments.

No. of Elements: 1

Having a single diode element simplifies the circuit design and improves overall efficiency, making this diode/rectifier a reliable and cost-effective choice.

Maximum Repetitive Peak Reverse Voltage: 1200 V

With a high maximum repetitive peak reverse voltage, this diode/rectifier provides robust protection against reverse voltage spikes, ensuring the longevity of the circuit.

No. of Phases: 1

The single-phase configuration of this diode/rectifier makes it suitable for applications that require a simplified power supply and limited harmonic distortion.

Diode Element Material: SILICON CARBIDE

The silicon carbide diode element material offers superior thermal conductivity and high-temperature performance, making this diode/rectifier suitable for demanding and high-power applications.

Technical Specifications

Diodes & Rectifiers PCFFS20120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.723 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1230 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS20120AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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