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PCFFS5065AF

Onsemi

PCFFS5065AF by Onsemi

The Onsemi PCFFS5065AF is a Schottky rectifier diode with 650V reverse test voltage and 60A output current. It operates b/w -55 to 175 °C, dissipating up to 429W power. Ideal for high-efficiency applications, this surface-mount diode features silicon carbide material in a square package shape.

Median Price

$7.580

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,151 parts In-Stock

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-

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$7.580

1k+ parts

$6.780

10k+ parts

$6.380

1,151

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$7.580

$6.780

$6.380

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Chip Stock

USA . 80,000 parts In-Stock

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Vyrian

USA . 6,911 parts In-Stock

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Flip Electronics

USA . 1,151 parts In-Stock

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Digiode

USA . 368 parts In-Stock

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368

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AZTECH Wire

Italy . 995 parts In-Stock

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$11.620

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995

$11.620

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QUARKTWIN TECHNOLOGY LTD

USA . 19,301 parts In-Stock

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SupplyDigital Components

Austria . 7,087 parts In-Stock

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TANS Electronics

Latvia . 5,877 parts In-Stock

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Kulean Microsystems

USA . 5,089 parts In-Stock

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Perfect Parts

USA . 4,856 parts In-Stock

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GreenTree Electronics

Israel . 1,109 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 837 parts In-Stock

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Problanco Electronics

Mexico . 836 parts In-Stock

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UHIMA Technologies

Türkiye . 534 parts In-Stock

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Corohmni

South Africa . 95 parts In-Stock

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Overview

Unleash the power of efficiency with the PCFFS5065AF by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in their diodes and rectifiers, making them a trusted choice for a wide range of applications. With a maximum reverse test voltage of 650 V and a maximum output current of 60 A, this product offers exceptional performance and longevity. Say goodbye to worries about overheating or inefficiency with the PCFFS5065AF - your solution for high-power applications.

Feature Benefit Bullets

Config: SINGLE

Having a single configuration simplifies the design and installation process, making it easier to use this diode in various applications.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on circuit boards, saving space and facilitating mass production.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures efficient operation and minimizes power loss, contributing to overall energy efficiency.

Package Shape: SQUARE

Square package shape offers uniform and stable mounting, aiding in heat dissipation and ensuring reliable performance.

Reverse Test Voltage: 650 V

High reverse test voltage allows for use in applications requiring robust voltage handling capabilities, enhancing the versatility of this diode.

Package Style (Meter): UNCASED CHIP

Uncased chip packaging offers a compact and lightweight design, suitable for space-constrained environments and high-density circuit layouts.

Application: EFFICIENCY

Designed for efficiency-focused applications, this diode helps optimize power conversion processes and reduce energy waste.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in demanding conditions, making it suitable for industrial and automotive applications.

Minimum Operating Temperature: -55 °C

Wide operating temperature range enables use in both low and high-temperature environments, enhancing the diode's versatility.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and integration into circuit layouts, simplifying the installation process.

Maximum Power Dissipation: 429 W

High maximum power dissipation capability allows the diode to handle large power loads without overheating, ensuring long-term reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode type indicates suitability for converting AC to DC power, making this diode ideal for rectification and power supply applications.

Maximum Forward Voltage (VF): 1.75 V

Low maximum forward voltage drop minimizes energy loss and heat generation, improving overall efficiency and performance.

Maximum Output Current: 60 A

High maximum output current rating allows the diode to handle large electrical loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed and low forward voltage drop, enhancing the diode's efficiency and performance in high-frequency applications.

Terminal Form: NO LEAD

No lead terminal form simplifies the soldering process and reduces the risk of mechanical failure, enhancing the diode's reliability in various installation scenarios.

Maximum Repetitive Peak Reverse Voltage: 650 V

High maximum repetitive peak reverse voltage rating allows the diode to withstand voltage spikes and surges, ensuring long-term durability and protection for connected devices.

Maximum Non Repetitive Peak Forward Current: 230 A

High maximum non-repetitive peak forward current rating ensures the diode can handle short-duration power surges, making it suitable for high-demand applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high thermal conductivity and superior power handling capabilities, making this diode ideal for high-power and high-temperature environments.

Technical Specifications

Diodes & Rectifiers PCFFS5065AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

230 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

60 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

429 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS5065AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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