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PCFFS0865AF

Onsemi

PCFFS0865AF by Onsemi

PCFFS0865AF by Onsemi is a single rectifier diode with 650V reverse test voltage and 1.75V forward voltage, suitable for efficiency applications. It operates at a max temperature of 175 °C, features silicon carbide diode element material, and uses avalanche technology.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,570 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,929 parts In-Stock

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Kulean Microsystems

USA . 6,471 parts In-Stock

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TANS Electronics

Latvia . 5,794 parts In-Stock

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Problanco Electronics

Mexico . 2,602 parts In-Stock

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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Corphita

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Corohmni

South Africa . 393 parts In-Stock

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Overview

Discover the power of the PCFFS0865AF by Onsemi, a top-of-the-line rectifier diode that delivers unparalleled efficiency and performance. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a variety of applications where reliability is key. With a maximum reverse voltage of 650V and a maximum forward voltage of 1.75V, this diode is designed to provide superior performance under any conditions. Say goodbye to worries about overheating or breakdowns - invest in the PCFFS0865AF for the quality and peace of mind you deserve.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the design and makes the product easier to use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly process, saving time and effort.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures minimal power loss and improved efficiency in the circuit.

Package Shape: SQUARE

Square package shape provides a compact form factor and easy integration into circuit layouts.

Reverse Test Voltage: 650 V

High reverse test voltage supports applications where high voltage protection is needed.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers flexibility in mounting options and allows for customization in design.

Application: EFFICIENCY

Designed for efficiency-focused applications where low power loss and high performance are essential.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliability and stability under various operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC currents, making it suitable for rectification applications.

Maximum Forward Voltage (VF): 1.75 V

Low maximum forward voltage drop ensures minimal energy loss and high efficiency in forward conduction.

Technology: AVALANCHE

Avalanche technology provides robustness and reliability in handling high currents and voltages during operation.

Terminal Form: NO LEAD

No lead terminal form simplifies the mounting process and reduces the risk of mechanical failure or solder joint issues.

Maximum Repetitive Peak Reverse Voltage: 650 V

High maximum repetitive peak reverse voltage rating offers protection against voltage spikes and transients in the circuit.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material provides high temperature resistance, low forward voltage drop, and fast switching capabilities for improved performance.

Technical Specifications

Diodes & Rectifiers PCFFS0865AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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