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PCFFS10120AF

Onsemi

PCFFS10120AF by Onsemi

The Onsemi PCFFS10120AF is a single rectifier diode with 1230V reverse test voltage and 1.723V max forward voltage. It operates at up to 175 °C, making it suitable for high-efficiency applications. This surface-mount diode uses silicon carbide technology for improved performance.

Median Price

$40.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,493 parts In-Stock

1+ parts

$40.000

100+ parts

$16.600

1k+ parts

$10.100

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2,493

$40.000

$16.600

$10.100

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Distributors (In-Stock)

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Digiode

USA . 129 parts In-Stock

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$38.000

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129

$38.000

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 6,330 parts In-Stock

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6,330

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Flip Electronics

USA . 2,645 parts In-Stock

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2,645

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Distributors (Availability)

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AZTECH Wire

Italy . 382 parts In-Stock

1+ parts

$13.960

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382

$13.960

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Microchip USA

USA . 6,072 parts In-Stock

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$27.454

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6,072

$27.454

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Corphita

USA . 690 parts In-Stock

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$36.000

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690

$36.000

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Corohmni

South Africa . 119 parts In-Stock

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$40.000

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119

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Perfect Parts

USA . 11,505 parts In-Stock

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11,505

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TANS Electronics

Latvia . 8,110 parts In-Stock

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Problanco Electronics

Mexico . 6,603 parts In-Stock

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6,603

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SupplyDigital Components

Austria . 3,899 parts In-Stock

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3,899

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Kulean Microsystems

USA . 3,439 parts In-Stock

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3,439

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GreenTree Electronics

Israel . 2,593 parts In-Stock

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2,593

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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688

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Overview

Experience the exceptional quality and reliability of Onsemi with the PCFFS10120AF rectifier diode. This single-config, surface mount diode offers a maximum reverse current of 200 uA and a maximum repetitive peak reverse voltage of 1230 V, making it ideal for high-efficiency applications. With a package shape of SQUARE and technology of AVALANCHE, this diode ensures optimal performance even at temperatures up to 175 °C. Trust in Onsemi's expertise in diodes and rectifiers to provide you with a product that delivers unmatched value, benefits, and advantages for your projects.

Feature Benefit Bullets

Config: SINGLE

SINGLE configuration simplifies the setup and use of the diode, making it easier for users to integrate into their systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 200 uA

Low maximum reverse current helps in reducing power losses and improving overall efficiency of the system.

Package Shape: SQUARE

Square package shape provides easy and secure mounting on the PCB, ensuring stability and reliability in operation.

Reverse Test Voltage: 1230 V

High reverse test voltage rating ensures the diode can handle high voltage applications without breakdown, enhancing safety and reliability.

Package Style (Meter): UNCASED CHIP

Uncased chip package style offers compact design and efficient heat dissipation, making it suitable for space-constrained applications.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power consumption needs to be minimized for optimal performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the diode to perform reliably in harsh environments without degradation, ensuring long-term stability.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC, making it suitable for a wide range of power supply applications.

Maximum Forward Voltage (VF): 1.723 V

Low maximum forward voltage drop results in minimal power loss and improved efficiency in forward-biased operation.

Technology: AVALANCHE

Avalanche technology enhances the diode's ruggedness and reliability under high voltage conditions, increasing its overall lifespan.

Terminal Form: NO LEAD

No lead terminal form simplifies the soldering process and reduces the risk of mechanical stress on the diode, ensuring long-term reliability.

Maximum Repetitive Peak Reverse Voltage: 1230 V

High maximum repetitive peak reverse voltage rating makes the diode suitable for high voltage applications with repetitive voltage spikes or surges.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high thermal conductivity and robustness, making the diode suitable for high power and high temperature applications.

Technical Specifications

Diodes & Rectifiers PCFFS10120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.723 V

JESD-30 Code:

S-XXUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1230 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1230 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS10120AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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