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PCFFS4065AF

Onsemi

PCFFS4065AF by Onsemi

The Onsemi PCFFS4065AF is a Schottky rectifier diode with 650V reverse test voltage and 48A output current. It operates b/w -55 to 175 °C, dissipating up to 349W power. Ideal for high-efficiency applications, this surface-mount diode has a max forward voltage of 1.75V and non-repetitive peak forward current of 180A.

Median Price

$5.610

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,364 parts In-Stock

1+ parts

-

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$5.604

1,364

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$5.604

Rochester

USA . 1,356 parts In-Stock

1+ parts

-

100+ parts

$5.610

1k+ parts

$5.020

10k+ parts

$4.720

1,356

-

$5.610

$5.020

$4.720

Verical

USA . 1,356 parts In-Stock

1+ parts

-

100+ parts

$7.013

1k+ parts

$6.275

10k+ parts

$5.900

1,356

-

$7.013

$6.275

$5.900

Distributors (In-Stock)

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Vyrian

USA . 651 parts In-Stock

1+ parts

$5.604

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651

$5.604

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Chip Stock

USA . 23,000 parts In-Stock

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23,000

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Digiode

USA . 1,761 parts In-Stock

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1,761

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Flip Electronics

USA . 1,356 parts In-Stock

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1,356

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Distributors (Availability)

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Corohmni

South Africa . 79 parts In-Stock

1+ parts

$5.604

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79

$5.604

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Microchip USA

USA . 9,974 parts In-Stock

1+ parts

$31.668

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9,974

$31.668

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Problanco Electronics

Mexico . 5,907 parts In-Stock

1+ parts

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5,907

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,699 parts In-Stock

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1,699

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TANS Electronics

Latvia . 1,304 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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833

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Kulean Microsystems

USA . 734 parts In-Stock

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SupplyDigital Components

Austria . 675 parts In-Stock

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675

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Overview

Looking for a reliable and efficient solution in diodes and rectifiers? Look no further than the PCFFS4065AF by Onsemi. With a maximum reverse voltage of 650V and a maximum output current of 48A, this SCHOTTKY technology diode offers high performance and quality. Ideal for applications requiring efficiency, this product boasts a maximum power dissipation of 349W and a wide operating temperature range from -55 °C to 175°C. Trust Onsemi's reputation for excellence and innovation, and experience the value and benefits that the PCFFS4065AF can bring to your projects.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes installation and use straightforward, without the need for additional components or circuitry.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 200 uA

Low reverse current ensures high efficiency and minimal power loss in the circuit.

Package Shape: SQUARE

Square package shape provides stability and ease of mounting onto circuit boards.

Reverse Test Voltage: 650 V

High reverse test voltage allows for reliable operation in various voltage conditions.

Application: EFFICIENCY

Designed for efficiency-focused applications where power dissipation needs to be minimized.

Maximum Operating Temperature: 175 °C

Wide operating temperature range enables reliable performance in various environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power in electrical circuits.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop for improved performance.

Maximum Output Current: 48 A

High output current capability allows for handling of large electrical loads with ease.

Diode Element Material: SILICON CARBIDE

Silicon carbide material offers high thermal conductivity and efficiency, suitable for high-power applications.

Technical Specifications

Diodes & Rectifiers PCFFS4065AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

48 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

349 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS4065AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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