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PCFFS05120AF

Onsemi

PCFFS05120AF by Onsemi

PCFFS05120AF by Onsemi is a single rectifier diode with a max reverse voltage of 1200V and forward current of 5A. It operates b/w -55 to 175 °C, ideal for efficiency applications. The diode's technology is avalanche with silicon carbide material, suitable for high-power systems.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 73,000 parts In-Stock

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Vyrian

USA . 4,668 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 643 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,005 parts In-Stock

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Kulean Microsystems

USA . 4,919 parts In-Stock

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Problanco Electronics

Mexico . 4,216 parts In-Stock

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TANS Electronics

Latvia . 2,452 parts In-Stock

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SupplyDigital Components

Austria . 2,065 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 500 parts In-Stock

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Corohmni

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Overview

Discover the power of efficiency with Onsemi's PCFFS05120AF diode rectifier. Designed with top-quality materials and advanced technology, this single-configured rectifier diode offers a maximum reverse voltage of 1200V and an output current of 5A. Ideal for various applications that require high performance and reliability in extreme temperatures, this product provides exceptional value and benefits to customers looking for superior quality and durability. Upgrade your systems with Onsemi's PCFFS05120AF for optimized efficiency and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and electrical insulation, ensuring durability and safety.

Config: SINGLE

Simple configuration makes it easy to use and install.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Compact shape makes it easy to fit into various circuits and systems.

Reverse Test Voltage: 1200 V

High reverse test voltage provides reliable protection against reverse voltage spikes.

No. of Terminals: 3

Simple 3-terminal design for easy connection.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure and stable mounting on PCBs.

Application: EFFICIENCY

Designed for high efficiency applications, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without degradation, suitable for various environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for use in extreme conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Diode Type: RECTIFIER DIODE

Rectifier diode design for efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 5 A

High output current capability for powering various devices and circuits.

Technology: AVALANCHE

Avalanche technology for reliable and robust performance under high voltage conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminal design for easy and secure mounting on PCBs.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High reverse voltage rating for reliable protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 42 A

High peak forward current capability for handling surge current easily.

Diode Element Material: SILICON CARBIDE

Silicon carbide material for high efficiency and durability in demanding applications.

Technical Specifications

Diodes & Rectifiers PCFFS05120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

42 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS05120AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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