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PCFFS40120AF

Onsemi

PCFFS40120AF by Onsemi

The Onsemi PCFFS40120AF is a Schottky rectifier diode with 1200V reverse test voltage and 61A output current. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. With a max power dissipation of 682W, this surface-mount diode offers superior performance in various electronic systems.

Median Price

$50.700

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,344 parts In-Stock

1+ parts

$50.700

100+ parts

$24.000

1k+ parts

$15.000

10k+ parts

-

1,344

$50.700

$24.000

$15.000

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Distributors (In-Stock)

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Digiode

USA . 1,694 parts In-Stock

1+ parts

$48.165

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1,694

$48.165

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Chip Stock

USA . 56,000 parts In-Stock

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56,000

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Vyrian

USA . 7,976 parts In-Stock

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7,976

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Flip Electronics

USA . 692 parts In-Stock

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692

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Distributors (Availability)

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AZTECH Wire

Italy . 552 parts In-Stock

1+ parts

$16.620

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-

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552

$16.620

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Corphita

USA . 1,821 parts In-Stock

1+ parts

$45.630

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1,821

$45.630

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Corohmni

South Africa . 295 parts In-Stock

1+ parts

$50.700

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295

$50.700

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Microchip USA

USA . 4,584 parts In-Stock

1+ parts

$55.506

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4,584

$55.506

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Kulean Microsystems

USA . 8,045 parts In-Stock

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8,045

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TANS Electronics

Latvia . 5,848 parts In-Stock

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5,848

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SupplyDigital Components

Austria . 4,677 parts In-Stock

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4,677

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Problanco Electronics

Mexico . 2,243 parts In-Stock

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2,243

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GreenTree Electronics

Israel . 1,444 parts In-Stock

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1,444

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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512

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Overview

Enhance your efficiency with the PCFFS40120AF by Onsemi, a top-quality rectifier diode designed for maximum performance. Manufactured by Onsemi, a leading name in the industry, this diode offers a high reverse test voltage of 1200 V and a maximum output current of 61 A, making it perfect for a wide range of applications. With a maximum power dissipation of 682 W and a technology of Schottky, this diode delivers exceptional value and benefits to customers looking for reliability and durability in their electronic components. Upgrade your projects today with the PCFFS40120AF from Onsemi!

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product simple to use and easy to integrate into various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation onto PCBs, saving space and making assembly more efficient.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures minimal power loss and high efficiency in the circuit.

Package Shape: SQUARE

Square package shape provides stability and ease of handling during installation and maintenance.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable performance and protection against voltage spikes in the circuit.

Package Style (Meter): UNCASED CHIP

Uncased chip package style allows for direct heat dissipation and better thermal management, increasing overall product reliability.

Application: EFFICIENCY

Designed for efficiency, this product is ideal for applications where energy conservation and optimal performance are crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments and applications without compromising performance.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the product can function even in extreme cold conditions without issues.

Terminal Position: UPPER

Upper terminal position makes it easy to connect the diode in circuits and ensures proper orientation for efficient operation.

Maximum Power Dissipation: 682 W

High maximum power dissipation capability allows the product to handle high power loads without overheating or damaging the diode.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC power efficiently, making it ideal for rectification and power conversion applications.

Maximum Forward Voltage (VF): 1.75 V

Low maximum forward voltage drop ensures minimal voltage loss across the diode, improving overall circuit efficiency.

Maximum Output Current: 61 A

High maximum output current rating allows the diode to handle heavy current loads without causing a voltage drop or overheating.

Technology: SCHOTTKY

Schottky technology offers faster switching speeds, lower forward voltage drop, and higher efficiency compared to standard rectifier diodes.

Terminal Form: NO LEAD

No lead terminal form reduces the risk of short circuits and enhances the product's reliability and durability in various applications.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 270 A

High maximum non-repetitive peak forward current rating allows the diode to handle short-term current surges without being damaged.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high temperature resistance, fast switching speeds, and low power loss, enhancing overall performance and reliability.

Technical Specifications

Diodes & Rectifiers PCFFS40120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XUUC-N1

Maximum Non Repetitive Peak Forward Current:

270 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

61 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

682 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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