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PCFFS2065AF

Onsemi

PCFFS2065AF by Onsemi

The Onsemi PCFFS2065AF is a Schottky rectifier diode with 650V reverse test voltage and 20A max output current. Ideal for efficiency applications, it operates up to 175 °C, has a max forward voltage of 1.75V, and features surface mount packaging in a square shape.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 6,073 parts In-Stock

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Digiode

USA . 1,645 parts In-Stock

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AZTECH Wire

Italy . 209 parts In-Stock

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$9.060

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TANS Electronics

Latvia . 3,535 parts In-Stock

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Kulean Microsystems

USA . 3,381 parts In-Stock

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SupplyDigital Components

Austria . 2,329 parts In-Stock

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Corphita

USA . 1,731 parts In-Stock

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UHIMA Technologies

Türkiye . 724 parts In-Stock

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Corohmni

South Africa . 151 parts In-Stock

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Problanco Electronics

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Overview

Experience unparalleled efficiency and reliability with the PCFFS2065AF by Onsemi. As a leading manufacturer in diodes & rectifiers, Onsemi delivers top-quality products that exceed industry standards. This Schottky rectifier diode offers a maximum reverse voltage of 650V and a maximum output current of 20A, making it ideal for applications requiring high performance and stability. Say goodbye to inefficiencies and hello to superior power management with the PCFFS2065AF.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures minimal power loss and improved efficiency.

Package Shape: SQUARE

Square package shape provides stability and ease of mounting.

Reverse Test Voltage: 650 V

High reverse test voltage enables reliable performance in high voltage applications.

Package Style (Meter): UNCASED CHIP

Uncased chip design allows for compact and space-saving integration.

Application: EFFICIENCY

Designed for efficiency-focused applications, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments.

Terminal Position: UPPER

Upper terminal position makes connections easier and more accessible.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC currents.

Maximum Forward Voltage (VF): 1.75 V

Low maximum forward voltage results in minimal voltage drop and power losses.

Maximum Output Current: 20 A

High maximum output current capability for powering demanding electronic devices.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop.

Terminal Form: NO LEAD

No-lead terminal form simplifies assembly and reduces potential soldering issues.

Maximum Repetitive Peak Reverse Voltage: 650 V

High maximum repetitive peak reverse voltage for reliable operation in high voltage applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material offers high thermal conductivity and efficiency.

Technical Specifications

Diodes & Rectifiers PCFFS2065AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS2065AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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