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PCFFS15120AF

Onsemi

PCFFS15120AF by Onsemi

PCFFS15120AF by Onsemi is a Schottky rectifier diode with 15A output current and 1.723V forward voltage, ideal for efficiency applications. It features a max reverse voltage of 1200V, operates up to 175 °C, and has a surface-mount square package shape for easy installation.

Median Price

$4.646

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,185 parts In-Stock

1+ parts

-

100+ parts

$4.130

1k+ parts

$3.700

10k+ parts

$3.480

3,185

-

$4.130

$3.700

$3.480

Verical

USA . 1,601 parts In-Stock

1+ parts

-

100+ parts

$5.162

1k+ parts

$4.625

10k+ parts

$4.350

1,601

-

$5.162

$4.625

$4.350

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,356 parts In-Stock

1+ parts

$4.370

100+ parts

-

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1,356

$4.370

-

-

-

Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 7,091 parts In-Stock

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7,091

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-

Distributors (Availability)

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Corphita

USA . 245 parts In-Stock

1+ parts

$4.140

100+ parts

-

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245

$4.140

-

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Corohmni

South Africa . 167 parts In-Stock

1+ parts

$4.600

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167

$4.600

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AZTECH Wire

Italy . 498 parts In-Stock

1+ parts

$12.650

100+ parts

-

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498

$12.650

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Microchip USA

USA . 6,448 parts In-Stock

1+ parts

$42.962

100+ parts

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6,448

$42.962

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Kulean Microsystems

USA . 7,897 parts In-Stock

1+ parts

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7,897

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QUARKTWIN TECHNOLOGY LTD

USA . 5,483 parts In-Stock

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5,483

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SupplyDigital Components

Austria . 4,619 parts In-Stock

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4,619

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Problanco Electronics

Mexico . 2,642 parts In-Stock

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2,642

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TANS Electronics

Latvia . 1,346 parts In-Stock

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1,346

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UHIMA Technologies

Türkiye . 467 parts In-Stock

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467

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Overview

Unlock the power of efficiency with the Onsemi PCFFS15120AF Schottky rectifier diode. Manufactured by industry leader Onsemi, this high-quality diode offers a maximum output current of 15A and a maximum repetitive peak reverse voltage of 1200V, making it perfect for a wide range of applications. With a maximum reverse current of 200uA and a maximum forward voltage of 1.723V, this diode provides exceptional performance and reliability. Say goodbye to inefficiency and hello to superior power management with the Onsemi PCFFS15120AF.

Feature Benefit Bullets

Config: SINGLE

Having a single configuration simplifies the design process and reduces complexity in the circuit.

Surface Mount: YES

Being surface mountable allows for easy and convenient mounting onto circuit boards, saving space and reducing assembly time.

Maximum Reverse Current: 200 uA

Low maximum reverse current ensures low power consumption and minimal leakage current in the circuit.

Package Shape: SQUARE

Square shape package provides mechanical stability and ease of handling during assembly.

Reverse Test Voltage: 1230 V

High reverse test voltage ensures reliable performance and protection against reverse polarity.

Package Style (Meter): UNCASED CHIP

Uncased chip package offers compact size and efficient heat dissipation in high-power applications.

Application: EFFICIENCY

Designed for efficiency applications, ensuring optimal performance and energy savings.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in harsh environments.

Terminal Position: UPPER

Upper terminal position simplifies connection and allows for easy integration into circuit designs.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 1.723 V

Low forward voltage drop ensures minimal power loss and high energy efficiency in the circuit.

Maximum Output Current: 15 A

High maximum output current capability allows for handling of high-power loads with ease.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, making it suitable for high-frequency applications.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and minimizes parasitic inductance for improved performance.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage offers robust protection against reverse voltage spikes and transient surges.

Diode Element Material: SILICON CARBIDE

Silicon carbide diode element material provides high temperature tolerance and greater efficiency than traditional silicon diodes.

Technical Specifications

Diodes & Rectifiers PCFFS15120AF attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.723 V

JESD-30 Code:

S-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1230 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

PCFFS15120AF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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