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NRVBS210FA

Onsemi

NRVBS210FA by Onsemi

NRVBS210FA by Onsemi is a Schottky rectifier diode with a max reverse recovery time of 0.007 us and max output current of 2A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a peak reflow temperature of 260C.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 176,751 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.125

10k+ parts

$0.111

176,751

-

$0.150

$0.125

$0.111

Verical

USA . 90,000 parts In-Stock

1+ parts

-

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-

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$0.131

90,000

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-

-

$0.131

Distributors (In-Stock)

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Nova Conductors

Japan . 63 parts In-Stock

1+ parts

$0.174

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63

$0.174

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Vyrian

USA . 5,579 parts In-Stock

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5,579

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Digiode

USA . 2,126 parts In-Stock

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2,126

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Distributors (Availability)

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Ampacity Inc.

Singapore . 134,642 parts In-Stock

1+ parts

$0.105

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-

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134,642

$0.105

-

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Corohmni

South Africa . 330 parts In-Stock

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$0.171

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330

$0.171

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Continental Prestige Electronics

USA . 5,980 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

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$0.171

5,980

$0.174

-

-

$0.171

Argo Parts USA

USA . 3,416 parts In-Stock

1+ parts

$0.174

100+ parts

-

1k+ parts

-

10k+ parts

$0.169

3,416

$0.174

-

-

$0.169

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.174

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2,000

$0.174

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Component Stockers USA

USA . 1,886 parts In-Stock

1+ parts

$0.500

100+ parts

$0.240

1k+ parts

$0.150

10k+ parts

-

1,886

$0.500

$0.240

$0.150

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AZTECH Wire

Italy . 321 parts In-Stock

1+ parts

$18.480

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321

$18.480

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Kulean Microsystems

USA . 7,504 parts In-Stock

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7,504

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Problanco Electronics

Mexico . 6,487 parts In-Stock

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6,487

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SupplyDigital Components

Austria . 5,120 parts In-Stock

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TANS Electronics

Latvia . 3,357 parts In-Stock

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3,357

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Corphita

USA . 1,402 parts In-Stock

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1,402

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UHIMA Technologies

Türkiye . 842 parts In-Stock

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842

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Overview

Unlock the power of efficiency with the Onsemi NRVBS210FA diode. Manufactured by a trusted industry leader, this high-quality product is perfect for a wide range of applications. With a fast reverse recovery time and low reverse current, it offers exceptional value and performance. Whether you're looking to improve your electronic devices or enhance your projects, this Schottky diode is the ideal choice. Trust in Onsemi for top-of-the-line technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the design and makes it easier to integrate into circuits.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and facilitating automated assembly.

Maximum Reverse Recovery Time: 0.007 us

Fast reverse recovery time ensures efficiency and helps in reducing power losses in switching applications.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power dissipation and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on the PCB.

Reverse Test Voltage: 100 V

High reverse test voltage rating ensures reliable operation in various voltage conditions.

No. of Terminals: 2

Dual terminals simplify the connection and installation process.

Technical Specifications

Diodes & Rectifiers NRVBS210FA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.007 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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