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NRVUA110VT3G-GA01

Onsemi

NRVUA110VT3G-GA01 by Onsemi

NRVUA110VT3G-GA01 by Onsemi is a single diode with a reverse test voltage of 100V and max reverse recovery time of 0.03us. It is designed for high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 49,000 parts In-Stock

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Vyrian

USA . 4,070 parts In-Stock

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Digiode

USA . 1,507 parts In-Stock

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AZTECH Wire

Italy . 652 parts In-Stock

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$17.970

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TANS Electronics

Latvia . 7,321 parts In-Stock

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Kulean Microsystems

USA . 7,022 parts In-Stock

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SupplyDigital Components

Austria . 1,751 parts In-Stock

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UHIMA Technologies

Türkiye . 991 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 272 parts In-Stock

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Corohmni

South Africa . 171 parts In-Stock

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Overview

Discover the power of the NRVUA110VT3G-GA01 by Onsemi, a top-of-the-line diode rectifier that offers unparalleled quality and reliability. With a focus on high voltage ultra-fast recovery power applications, this product is designed to exceed expectations. Onsemi's commitment to excellence shines through in every aspect of this small outline package, from its dual terminal position to its silicon diode element material. Experience the benefits of fast reverse recovery time, low reverse current, and maximum output current, all while enjoying the peace of mind that comes with using a product that meets the AEC-Q101 reference standard. Upgrade your electronic projects today with the NRVUA110VT3G-GA01 and see the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a wide range of environments.

Maximum Reverse Recovery Time: 0.03 us

Ensures fast switching characteristics, making it ideal for high frequency applications.

Maximum Reverse Current: 2 uA

Low reverse leakage current ensures high efficiency and minimal power loss.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a variety of industrial applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, ensuring efficient conversion of AC to DC.

Technical Specifications

Diodes & Rectifiers NRVUA110VT3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

100 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.03 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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