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NRVUD320W1T4G-VF01

Onsemi

NRVUD320W1T4G-VF01 by Onsemi

NRVUD320W1T4G-VF01 by Onsemi is a single diode with 0.035 us reverse recovery time and 5 uA reverse current. It operates in temperatures from -65 to 175 °C, ideal for ultra-fast recovery power applications. With a max output current of 3 A and peak reverse voltage of 200 V, it's suitable for various rectifier diode needs.

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USA . 21,828 parts In-Stock

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Overview

Enhance your power applications with the NRVUD320W1T4G-VF01 by Onsemi. As a leader in diodes & rectifiers, Onsemi ensures top-notch quality and reliability. This ultra-fast recovery power diode offers customers unmatched performance and efficiency. With a maximum output current of 3A and a peak repetitive peak reverse voltage of 200V, this diode is perfect for a wide range of applications. Trust Onsemi to deliver superior products that meet your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, making it suitable for various environments and applications.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures efficient and quick operation of the diode, making it ideal for applications where fast response times are critical.

Maximum Forward Voltage (VF): 0.95 V

The low forward voltage drop of 0.95 V helps in minimizing power loss and increasing efficiency in power conversion applications.

Maximum Output Current: 3 A

With a high maximum output current of 3 A, this diode can handle higher power loads, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage rating of 200 V makes this diode suitable for applications requiring higher voltage handling capabilities.

Technical Specifications

Diodes & Rectifiers NRVUD320W1T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUD320W1T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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