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NRVUS1MFA

Onsemi

NRVUS1MFA by Onsemi

NRVUS1MFA by Onsemi is a single rectifier diode with 1000V reverse test voltage and 0.075us max reverse recovery time. It operates b/w -55 to 150 °C, suitable for efficiency applications. The diode has a max forward voltage of 1.7V and can handle up to 1A output current.

Median Price

$0.121

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$0.045

100+ parts

$0.043

1k+ parts

$0.043

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-

150

$0.045

$0.043

$0.043

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Mouser Electronics

USA . 9,993 parts In-Stock

1+ parts

$0.640

100+ parts

$0.252

1k+ parts

$0.171

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-

9,993

$0.640

$0.252

$0.171

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Chip1Stop

Japan . 255 parts In-Stock

1+ parts

$1.420

100+ parts

$0.384

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-

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255

$1.420

$0.384

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Verical

USA . 1,065,000 parts In-Stock

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-

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$0.121

1,065,000

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$0.121

Rochester

USA . 921,000 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

$0.109

10k+ parts

$0.097

921,000

-

$0.131

$0.109

$0.097

DigiKey

USA . 577,579 parts In-Stock

1+ parts

-

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$0.070

577,579

-

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$0.070

Newark

USA . 23,250 parts In-Stock

1+ parts

-

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$0.102

23,250

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$0.102

EBV Elektronik

Germany . 6,000 parts In-Stock

1+ parts

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6,000

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Flip Electronics (Authorized)

USA . 1,579 parts In-Stock

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1,579

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Distributors (In-Stock)

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Digiode

USA . 1,840 parts In-Stock

1+ parts

$0.043

100+ parts

-

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1,840

$0.043

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Nova Conductors

Japan . 43 parts In-Stock

1+ parts

$0.148

100+ parts

-

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43

$0.148

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Maritex

Poland . 3,742 parts In-Stock

1+ parts

$0.215

100+ parts

$0.115

1k+ parts

$0.109

10k+ parts

$0.098

3,742

$0.215

$0.115

$0.109

$0.098

IBS Electronics

USA . 24,971,666 parts In-Stock

1+ parts

$0.470

100+ parts

-

1k+ parts

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10k+ parts

$0.059

24,971,666

$0.470

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-

$0.059

Flip Electronics

USA . 577,579 parts In-Stock

1+ parts

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577,579

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Vyrian

USA . 185,612 parts In-Stock

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185,612

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Chip Stock

USA . 10,500 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 185,775 parts In-Stock

1+ parts

$0.038

100+ parts

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185,775

$0.038

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Semicontronic

India . 184,254 parts In-Stock

1+ parts

$0.038

100+ parts

$0.037

1k+ parts

$0.037

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184,254

$0.038

$0.037

$0.037

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Corphita

USA . 1,348 parts In-Stock

1+ parts

$0.040

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1,348

$0.040

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Corohmni

South Africa . 399 parts In-Stock

1+ parts

$0.045

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399

$0.045

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.045

100+ parts

$0.043

1k+ parts

$0.043

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150

$0.045

$0.043

$0.043

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Argo Parts USA

USA . 4,445 parts In-Stock

1+ parts

$0.148

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$0.144

4,445

$0.148

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$0.144

Continental Prestige Electronics

USA . 1,161 parts In-Stock

1+ parts

$0.148

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$0.145

1,161

$0.148

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$0.145

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.148

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$0.145

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100

$0.148

$0.145

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Aztec Data Supply Inc.

USA . 1,495 parts In-Stock

1+ parts

$0.179

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1,495

$0.179

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Perfect Parts

USA . 200,749 parts In-Stock

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Lixinc

USA . 13,548 parts In-Stock

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Kulean Microsystems

USA . 8,325 parts In-Stock

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TANS Electronics

Latvia . 3,793 parts In-Stock

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3,793

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Problanco Electronics

Mexico . 3,591 parts In-Stock

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3,591

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SupplyDigital Components

Austria . 2,767 parts In-Stock

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2,767

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UHIMA Technologies

Türkiye . 580 parts In-Stock

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580

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Microchip USA

USA . 199 parts In-Stock

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199

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Overview

Discover the NRVUS1MFA by Onsemi, a high-quality rectifier diode that offers unparalleled efficiency and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for a variety of applications where precision and performance are crucial. With a maximum reverse test voltage of 1000V and a maximum output current of 1A, this small outline package diode ensures optimal functionality even in extreme temperatures ranging from -55°C to 150°C. Experience the value and benefits of this diode's fast recovery time, low reverse current, and matte tin finish terminals, making it the ideal choice for demanding projects. Elevate your designs with the NRVUS1MFA and unlock new possibilities in your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the diode, ensuring a longer lifespan for the product.

Maximum Reverse Recovery Time: 0.075 us

Fast reverse recovery time indicates high efficiency and quicker response in switching applications.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and improves overall efficiency of the diode.

Reverse Test Voltage: 1000 V

High reverse test voltage capability makes this diode suitable for high voltage applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Technical Specifications

Diodes & Rectifiers NRVUS1MFA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

1000 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS1MFA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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