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NRVUD340T4G-VF01

Onsemi

NRVUD340T4G-VF01 by Onsemi

NRVUD340T4G-VF01 by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.05 us and max output current of 3A. It operates in temperatures ranging from -55 to 175 °C and is ideal for applications requiring high-speed switching capabilities.

Median Price

$0.530

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 5,000 parts In-Stock

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$0.530

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Vyrian

USA . 1,976 parts In-Stock

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Chip Stock

USA . 39,000 parts In-Stock

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Flip Electronics

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Digiode

USA . 390 parts In-Stock

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390

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Corohmni

South Africa . 61 parts In-Stock

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$0.540

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61

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Microchip USA

USA . 251 parts In-Stock

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$3.510

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Kulean Microsystems

USA . 8,151 parts In-Stock

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SupplyDigital Components

Austria . 7,465 parts In-Stock

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Problanco Electronics

Mexico . 4,995 parts In-Stock

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TANS Electronics

Latvia . 4,042 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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UHIMA Technologies

Türkiye . 216 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NRVUD340T4G-VF01 diode rectifier. This innovative product offers ultra-fast recovery power, making it ideal for a wide range of applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 400V, this diode is designed to deliver exceptional performance under demanding conditions. Trust Onsemi for cutting-edge technology and unmatched value in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and resistance to environmental factors, making this product suitable for a wide range of applications.

Config: SINGLE

SINGLE configuration makes it easy to integrate this diode into a circuit, simplifying the overall design process.

Surface Mount: YES

Surface mount capability allows for easy assembly onto circuit boards, saving time and simplifying manufacturing processes.

Maximum Reverse Recovery Time: 0.05 us

Ultra-fast reverse recovery time ensures efficient operation and reduces power loss in applications requiring quick switching.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency of the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement in circuit designs, optimizing space and layout.

No. of Terminals: 2

Two terminals simplifies connection and ensures proper installation in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs in various applications.

Application: ULTRA FAST RECOVERY POWER

Specifically designed for ultra-fast recovery power applications, making it an ideal choice for high-speed circuits.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for reliable performance in demanding environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode can function in a wide range of environmental conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good conductivity and durability, ensuring reliable performance over time.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in the circuit, reducing potential errors.

Case Connection: CATHODE

Cathode case connection provides clear identification of the diode's polarity, preventing incorrect installation.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes heat exposure, reducing the risk of damage during the assembly process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliable connections during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability, making this diode suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient current rectification, making it suitable for power supply and conversion applications.

Maximum Forward Voltage (VF): 1.15 V

Low forward voltage drop ensures minimal power loss and efficient operation in forward bias.

Maximum Output Current: 3 A

High output current capability allows for handling of large currents in power applications.

Terminal Form: GULL WING

Gull wing terminal form provides easy soldering and secure connections in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating makes this diode suitable for applications requiring voltage rectification and protection.

Maximum Non Repetitive Peak Forward Current: 75 A

High peak forward current handling capability allows for temporary overcurrent situations without damage to the diode.

Diode Element Material: SILICON

Silicon material of the diode element provides good conductivity and thermal stability, ensuring long-term reliability.

Technical Specifications

Diodes & Rectifiers NRVUD340T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUD340T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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