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NRVUS2JA

Onsemi

NRVUS2JA by Onsemi

NRVUS2JA by Onsemi is a single rectifier diode with 600V reverse test voltage and 0.075us reverse recovery time. It is ideal for super fast recovery applications, operating b/w -55 to 150 °C, with a max output current of 1.5A.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,480 parts In-Stock

1+ parts

$0.700

100+ parts

$0.427

1k+ parts

$0.172

10k+ parts

$0.112

7,480

$0.700

$0.427

$0.172

$0.112

Chip1Stop

Japan . 7,480 parts In-Stock

1+ parts

$1.440

100+ parts

$0.391

1k+ parts

$0.228

10k+ parts

-

7,480

$1.440

$0.391

$0.228

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.142

100+ parts

-

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10

$0.142

-

-

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Digiode

USA . 1,305 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

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1,305

$0.570

-

-

-

Chip Stock

USA . 46,000 parts In-Stock

1+ parts

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46,000

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Vyrian

USA . 7,208 parts In-Stock

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7,208

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,044 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

3,044

$0.041

-

-

-

Corohmni

South Africa . 324 parts In-Stock

1+ parts

$0.139

100+ parts

-

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-

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324

$0.139

-

-

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Continental Prestige Electronics

USA . 5,828 parts In-Stock

1+ parts

$0.142

100+ parts

-

1k+ parts

-

10k+ parts

$0.139

5,828

$0.142

-

-

$0.139

Argo Parts USA

USA . 4,327 parts In-Stock

1+ parts

$0.142

100+ parts

-

1k+ parts

-

10k+ parts

$0.138

4,327

$0.142

-

-

$0.138

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.142

100+ parts

-

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50

$0.142

-

-

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Ampacity Inc.

Singapore . 7,139 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

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7,139

$0.510

-

-

-

Corphita

USA . 1,417 parts In-Stock

1+ parts

$0.540

100+ parts

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1,417

$0.540

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Perfect Parts

USA . 50,266 parts In-Stock

1+ parts

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50,266

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QUARKTWIN TECHNOLOGY LTD

USA . 26,182 parts In-Stock

1+ parts

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26,182

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RC Electronics

USA . 7,500 parts In-Stock

1+ parts

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7,500

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Authorized Procurement Solutions

USA . 7,480 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,480

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GreenTree Electronics

Israel . 7,480 parts In-Stock

1+ parts

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100+ parts

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7,480

-

-

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TANS Electronics

Latvia . 4,117 parts In-Stock

1+ parts

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100+ parts

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4,117

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Problanco Electronics

Mexico . 3,314 parts In-Stock

1+ parts

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3,314

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SupplyDigital Components

Austria . 1,732 parts In-Stock

1+ parts

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1,732

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Kulean Microsystems

USA . 1,039 parts In-Stock

1+ parts

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1,039

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UHIMA Technologies

Türkiye . 886 parts In-Stock

1+ parts

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100+ parts

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886

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Overview

Discover the NRVUS2JA by Onsemi, a top-quality rectifier diode designed for super-fast recovery applications. With a maximum reverse test voltage of 600V and a low reverse recovery time of 0.075 us, this diode offers unparalleled efficiency and performance. Manufactured by Onsemi, a trusted leader in the industry, the NRVUS2JA is built to last with a durable plastic/epoxy package body material and a matte tin terminal finish. Ideal for a wide range of electronic devices, this diode provides customers with reliable, high-performance solutions that deliver exceptional value and benefits. Elevate your projects with the NRVUS2JA and experience the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent durability and protection for the diode, ensuring long-lasting performance.

Config: SINGLE

Simplified design with a single diode configuration, making it easy to install and use.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and improving overall assembly efficiency.

Maximum Reverse Recovery Time: 0.075 us

Ensures rapid switching and efficient operation of the diode in circuits.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and enhances overall efficiency of the diode.

Package Shape: RECTANGULAR

Sleek and compact design allows for efficient placement and utilization in various electronic devices.

Reverse Test Voltage: 600 V

High reverse test voltage ensures reliable performance and protection against voltage fluctuations.

No. of Terminals: 2

Simple two-terminal connection for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact design saves space and allows for easy installation in tight spaces.

Application: SUPER FAST RECOVERY

Ideal for applications requiring rapid recovery times, ensuring efficient performance in high-speed circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures strong solder connections for reliable performance.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and installation.

Maximum Time At Peak Reflow Temperature (s): 30

Facilitates efficient reflow soldering process and ensures proper connection of the diode to the circuit board.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for proper solder melting and bonding for secure connections.

Reference Standard: AEC-Q101

Compliance with automotive electronic component quality standard ensures high reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of alternating current (AC) to direct current (DC) in electronic circuits.

Maximum Forward Voltage (VF): 1.7 V

Low forward voltage drop minimizes power loss and enhances energy efficiency in circuits.

Maximum Output Current: 1.5 A

High output current capability allows for reliable performance in various electronic applications.

Terminal Form: C BEND

C bend terminal form provides secure and stable connections for reliable operation.

Maximum Repetitive Peak Reverse Voltage: 600 V

High reverse voltage rating ensures protection against voltage spikes and surges in circuits.

Maximum Non Repetitive Peak Forward Current: 50 A

Capability to handle high non-repetitive peak currents, making it suitable for applications with occasional high current spikes.

Diode Element Material: SILICON

Silicon diode element offers high efficiency, low power dissipation, and reliable performance in electronic circuits.

Technical Specifications

Diodes & Rectifiers NRVUS2JA attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

SUPER FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS2JA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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