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NRVUS160VT3G

Onsemi

NRVUS160VT3G by Onsemi

NRVUS160VT3G by Onsemi is a single diode with 0.075 us reverse recovery time and 5 uA reverse current. It is used in high voltage ultra fast recovery power applications, with a max operating temperature of 175 °C and peak reflow temperature of 260 C.

Median Price

$0.116

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 19,442 parts In-Stock

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$0.720

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$0.285

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$0.194

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$0.720

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Mouser Electronics

USA . 11,972 parts In-Stock

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$0.720

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$0.286

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$0.181

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$0.134

11,972

$0.720

$0.286

$0.181

$0.134

Future Electronics

Canada . 95,000 parts In-Stock

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$0.110

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$0.110

Avnet

USA . 17,500 parts In-Stock

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Verical

USA . 10,000 parts In-Stock

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$0.130

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$0.122

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$0.122

Chip1Stop

Japan . 10,000 parts In-Stock

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$0.111

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Master Electronics

USA . 10,000 parts In-Stock

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$0.111

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$0.103

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$0.111

$0.103

Arrow

USA . 2,500 parts In-Stock

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$0.116

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Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$0.346

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$0.346

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Digiode

USA . 221 parts In-Stock

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$0.380

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Chip Stock

USA . 78,200 parts In-Stock

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NAC Semi

USA . 75,000 parts In-Stock

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Vyrian

USA . 14,964 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,499 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.068

100+ parts

$0.062

1k+ parts

$0.056

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350

$0.068

$0.062

$0.056

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Aztec Data Supply Inc.

USA . 4,649 parts In-Stock

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$0.090

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$0.090

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Ampacity Inc.

Singapore . 24,402 parts In-Stock

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$0.093

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$0.093

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Semicontronic

India . 15,248 parts In-Stock

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$0.093

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$0.091

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$0.090

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Corohmni

South Africa . 453 parts In-Stock

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$0.109

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453

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Aranea Global

USA . 1,000 parts In-Stock

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$0.339

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$0.326

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$0.339

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Argo Parts USA

USA . 3,141 parts In-Stock

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$0.346

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$0.336

3,141

$0.346

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$0.336

Continental Prestige Electronics

USA . 279 parts In-Stock

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$0.346

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$0.339

279

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Corphita

USA . 244 parts In-Stock

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$0.360

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Perfect Parts

USA . 67,200 parts In-Stock

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iBuyXS LLC

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Problanco Electronics

Mexico . 5,518 parts In-Stock

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SupplyDigital Components

Austria . 5,012 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,833 parts In-Stock

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Lixinc

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

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UHIMA Technologies

Türkiye . 828 parts In-Stock

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Kulean Microsystems

USA . 350 parts In-Stock

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Overview

Unlock the power of high voltage ultra-fast recovery with the NRVUS160VT3G by Onsemi. Manufactured with precision and expertise, this diode offers unparalleled quality and reliability. Ideal for a wide range of applications, this product provides customers with superior performance and efficiency. Experience the value and benefits of this cutting-edge technology, designed to meet your high voltage power needs. Elevate your projects with the NRVUS160VT3G and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY provides durability and protection for the diode, ensuring a longer lifespan.

Maximum Reverse Recovery Time: 0.075 us

The low reverse recovery time allows for efficient switching, making this diode suitable for high-speed applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand extreme conditions without malfunctioning.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures a reliable soldering process during assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to convert alternating current (AC) to direct current (DC) efficiently.

Technical Specifications

Diodes & Rectifiers NRVUS160VT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS160VT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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