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NRVUS220VT3G

Onsemi

NRVUS220VT3G by Onsemi

NRVUS220VT3G by Onsemi is a single diode with ultra-fast recovery power for applications requiring high-speed performance. It features a max reverse recovery time of 0.035 us, max forward voltage of 0.95 V, and can handle a max output current of 2 A. Ideal for use in environments with operating temperatures ranging from -65 to 175 °C.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20,615 parts In-Stock

1+ parts

$0.630

100+ parts

$0.249

1k+ parts

$0.168

10k+ parts

-

20,615

$0.630

$0.249

$0.168

-

Mouser Electronics

USA . 14,150 parts In-Stock

1+ parts

$0.630

100+ parts

$0.249

1k+ parts

$0.188

10k+ parts

-

14,150

$0.630

$0.249

$0.188

-

Arrow

USA . 5,000 parts In-Stock

1+ parts

$0.661

100+ parts

$0.261

1k+ parts

$0.176

10k+ parts

$0.130

5,000

$0.661

$0.261

$0.176

$0.130

Chip1Stop

Japan . 247,500 parts In-Stock

1+ parts

-

100+ parts

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$0.104

247,500

-

-

-

$0.104

Verical

USA . 235,000 parts In-Stock

1+ parts

-

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$0.119

235,000

-

-

-

$0.119

Rochester

USA . 235,000 parts In-Stock

1+ parts

-

100+ parts

$0.129

1k+ parts

$0.107

10k+ parts

$0.095

235,000

-

$0.129

$0.107

$0.095

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.152

100+ parts

-

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-

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50

$0.152

-

-

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Digiode

USA . 1,987 parts In-Stock

1+ parts

$0.408

100+ parts

-

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1,987

$0.408

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Vyrian

USA . 154,847 parts In-Stock

1+ parts

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154,847

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IBS Electronics

USA . 37,500 parts In-Stock

1+ parts

-

100+ parts

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$0.140

37,500

-

-

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$0.140

NAC Semi

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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$0.229

30,000

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$0.229

Chip Stock

USA . 23,500 parts In-Stock

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23,500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 151,518 parts In-Stock

1+ parts

$0.088

100+ parts

-

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-

10k+ parts

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151,518

$0.088

-

-

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Corohmni

South Africa . 332 parts In-Stock

1+ parts

$0.104

100+ parts

-

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332

$0.104

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Aztec Data Supply Inc.

USA . 3,064 parts In-Stock

1+ parts

$0.120

100+ parts

-

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3,064

$0.120

-

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Continental Prestige Electronics

USA . 6,157 parts In-Stock

1+ parts

$0.152

100+ parts

-

1k+ parts

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10k+ parts

$0.149

6,157

$0.152

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-

$0.149

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.152

100+ parts

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1,000

$0.152

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Argo Parts USA

USA . 459 parts In-Stock

1+ parts

$0.152

100+ parts

-

1k+ parts

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10k+ parts

$0.147

459

$0.152

-

-

$0.147

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.155

100+ parts

$0.155

1k+ parts

$0.155

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3,000

$0.155

$0.155

$0.155

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Corphita

USA . 1,222 parts In-Stock

1+ parts

$0.387

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1,222

$0.387

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,721 parts In-Stock

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22,721

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iodParts Technologies Inc.

India . 12,084 parts In-Stock

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Kulean Microsystems

USA . 5,339 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Formix International (Excess)

India . 2,500 parts In-Stock

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SupplyDigital Components

Austria . 2,367 parts In-Stock

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2,367

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Problanco Electronics

Mexico . 2,173 parts In-Stock

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Lixinc

USA . 803 parts In-Stock

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803

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UHIMA Technologies

Türkiye . 537 parts In-Stock

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537

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Microchip USA

USA . 468 parts In-Stock

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468

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TANS Electronics

Latvia . 365 parts In-Stock

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365

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Overview

Enhance your power system with the NRVUS220VT3G diode rectifier by Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for ultra-fast recovery power applications. This single-configured diode boasts a maximum reverse recovery time of 0.035 us and a maximum output current of 2 A, making it an ideal choice for various power systems. With a maximum repetitive peak reverse voltage of 200 V and a matte tin terminal finish, this diode offers unparalleled performance and efficiency. Upgrade your power system today with the NRVUS220VT3G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, making it suitable for a variety of applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation, making it easier to integrate into different electronic systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures improved efficiency and performance of the diode, making it suitable for high-speed applications.

Maximum Reverse Current: 2 uA

Low reverse current helps reduce power losses and improves overall efficiency of the circuit where the diode is used.

Application: ULTRA FAST RECOVERY POWER

Designed for ultra-fast recovery power applications, this diode is ideal for high-frequency and high-efficiency systems.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures, making it suitable for various industrial environments.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop helps minimize power losses and increases efficiency, making it suitable for power-sensitive applications.

Technical Specifications

Diodes & Rectifiers NRVUS220VT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS220VT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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