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NRVUA160VT3G

Onsemi

NRVUA160VT3G by Onsemi

NRVUA160VT3G by Onsemi is a single rectifier diode with a max reverse recovery time of 0.075 us and max forward voltage of 1.25 V. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a peak reflow temperature of 260 C.

Median Price

$0.118

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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DigiKey

USA . 1,677 parts In-Stock

1+ parts

$0.670

100+ parts

$0.264

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$0.179

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$0.161

1,677

$0.670

$0.264

$0.179

$0.161

Arrow

USA . 180,000 parts In-Stock

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Verical

USA . 180,000 parts In-Stock

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$0.118

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Chip1Stop

Japan . 180,000 parts In-Stock

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$0.116

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Distributors (In-Stock)

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Greenchips

USA . 6,367 parts In-Stock

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$0.128

100+ parts

$0.122

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$0.116

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$0.105

6,367

$0.128

$0.122

$0.116

$0.105

Nova Conductors

Japan . 500 parts In-Stock

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$0.164

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$0.164

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Digiode

USA . 1,639 parts In-Stock

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$0.456

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Vyrian

USA . 117,219 parts In-Stock

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Chip Stock

USA . 53,500 parts In-Stock

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IBS Electronics

USA . 45,000 parts In-Stock

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$0.201

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ComSIT Distribution GmbH

Germany . 42,692 parts In-Stock

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ComSIT USA

USA . 42,692 parts In-Stock

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Flip Electronics

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NAC Semi

USA . 10,000 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 6,367 parts In-Stock

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Sensible Micro Corp

USA . 1,960 parts In-Stock

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Semicontronic

India . 56,557 parts In-Stock

1+ parts

$0.093

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$0.091

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$0.090

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$0.091

$0.090

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Ampacity Inc.

Singapore . 117,023 parts In-Stock

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$0.094

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$0.094

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Corohmni

South Africa . 84 parts In-Stock

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$0.111

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$0.111

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Aztec Data Supply Inc.

USA . 3,018 parts In-Stock

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$0.120

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Bastille Electronics

Australia . 300 parts In-Stock

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$0.164

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$0.156

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$0.148

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$0.146

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$0.146

Continental Prestige Electronics

USA . 6,698 parts In-Stock

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$0.164

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Argo Parts USA

USA . 733 parts In-Stock

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733

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Corphita

USA . 140 parts In-Stock

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$0.432

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Perfect Parts

USA . 28,652 parts In-Stock

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iodParts Technologies Inc.

India . 17,452 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

Austria . 3,205 parts In-Stock

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Formix International (Excess)

India . 2,771 parts In-Stock

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Infinite Electronics LLP (Excess)

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Ashlea Components Ltd (Excess)

UK . 1,960 parts In-Stock

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Lixinc

USA . 1,577 parts In-Stock

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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Overview

Discover the superior quality and reliability of the NRVUA160VT3G diode by Onsemi, a top-tier manufacturer in the industry. This product falls under the Diodes & Rectifiers category, offering high voltage ultra-fast recovery power applications. With its small outline package style and dual terminals, this diode provides easy installation and efficient performance. Experience the benefits of low reverse current and fast reverse recovery time, ensuring optimal functionality in various electronic devices. Trust Onsemi for cutting-edge technology and exceptional value with the NRVUA160VT3G diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to damage, ensuring the longevity of the diode.

Maximum Reverse Recovery Time: 0.075 us

The ultra-fast reverse recovery time ensures efficient operation and minimal energy loss, making this diode suitable for high-speed applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and maintain performance reliability.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and ensures a strong bond with the circuit board, enhancing the diode's overall reliability.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating allows the diode to handle high-power applications without the risk of breakdown, making it a dependable choice for demanding circuits.

Technical Specifications

Diodes & Rectifiers NRVUA160VT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.075 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUA160VT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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