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NRVUB1660CTT4G

Onsemi

NRVUB1660CTT4G by Onsemi

NRVUB1660CTT4G by Onsemi is a common cathode diode with 0.06 us reverse recovery time. It is a rectifier diode with 600V peak reverse voltage and 8A output current, suitable for ultra-fast recovery power applications. The package is small outline, surface mountable, with matte tin terminal finish and gull wing terminal form.

Median Price

$4.070

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,952 parts In-Stock

1+ parts

$4.070

100+ parts

$2.180

1k+ parts

$1.890

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-

10,952

$4.070

$2.180

$1.890

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DigiKey

USA . 1,064 parts In-Stock

1+ parts

$5.010

100+ parts

$2.353

1k+ parts

$1.712

10k+ parts

$1.657

1,064

$5.010

$2.353

$1.712

$1.657

Verical

USA . 800 parts In-Stock

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$2.646

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800

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$2.646

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.988

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500

$1.988

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Bristol Electronics

USA . 183 parts In-Stock

1+ parts

$2.973

100+ parts

$1.397

1k+ parts

$1.338

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183

$2.973

$1.397

$1.338

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Digiode

USA . 1,577 parts In-Stock

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$3.372

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1,577

$3.372

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Chip Stock

USA . 4,340 parts In-Stock

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4,340

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IBS Electronics

USA . 1,600 parts In-Stock

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$2.147

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$2.213

1,600

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$2.147

$2.213

NAC Semi

USA . 1,600 parts In-Stock

1+ parts

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$2.720

10k+ parts

$2.510

1,600

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$2.720

$2.510

Vyrian

USA . 399 parts In-Stock

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399

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Dan-Mar Components

USA . 183 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 22,213 parts In-Stock

1+ parts

$0.014

100+ parts

$0.014

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$0.014

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22,213

$0.014

$0.014

$0.014

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Aztec Data Supply Inc.

USA . 187 parts In-Stock

1+ parts

$0.144

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187

$0.144

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.190

100+ parts

$0.173

1k+ parts

$0.156

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350

$0.190

$0.173

$0.156

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Corohmni

South Africa . 383 parts In-Stock

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$1.699

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383

$1.699

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Argo Parts USA

USA . 4,111 parts In-Stock

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$1.988

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4,111

$1.988

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Continental Prestige Electronics

USA . 557 parts In-Stock

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$1.988

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$1.949

557

$1.988

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-

$1.949

Ampacity Inc.

Singapore . 575 parts In-Stock

1+ parts

$3.090

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575

$3.090

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Corphita

USA . 447 parts In-Stock

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$3.195

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447

$3.195

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iBuyXS LLC

. 60,000 parts In-Stock

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$7.410

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$7.410

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Microchip USA

USA . 7,002 parts In-Stock

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$15.161

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$15.161

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BidChips

USA . 60,000 parts In-Stock

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RC Electronics

USA . 48,479 parts In-Stock

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Lixinc

USA . 10,350 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 5,871 parts In-Stock

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Kulean Microsystems

USA . 5,769 parts In-Stock

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Problanco Electronics

Mexico . 5,604 parts In-Stock

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TANS Electronics

Latvia . 3,816 parts In-Stock

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UHIMA Technologies

Türkiye . 954 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 50 parts In-Stock

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50

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Overview

Unleash the power of the NRVUB1660CTT4G by Onsemi and experience top-notch quality and reliability like never before. As a leading manufacturer in the industry, Onsemi brings you a diode that is perfect for ultra-fast recovery power applications. With a common cathode configuration and two elements, this product offers unmatched performance and efficiency. Say goodbye to downtime and hello to seamless operations with the NRVUB1660CTT4G. Trust in Onsemi to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and insulation for safe operation.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy installation and connection in circuits.

Surface Mount: YES

Facilitates PCB assembly and saves space.

Maximum Reverse Recovery Time: 0.06 us

Ensures fast switching and efficient performance.

Package Shape: RECTANGULAR

Fits easily into various types of circuits and applications.

Maximum Operating Temperature: 175 °C

Suitable for a wide range of operating conditions.

Maximum Forward Voltage (VF): 1.2 V

Ensures low power loss and high efficiency.

Maximum Output Current: 8 A

Capable of handling high loads and power requirements.

Maximum Repetitive Peak Reverse Voltage: 600 V

Provides high voltage protection and reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC power.

Technical Specifications

Diodes & Rectifiers NRVUB1660CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.06 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUB1660CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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