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NRVUS120VT3G

Onsemi

NRVUS120VT3G by Onsemi

NRVUS120VT3G by Onsemi is a single diode with 0.035 us reverse recovery time and 2 uA reverse current. It is used in high voltage ultra fast recovery power applications, operating b/w -65 to 175 °C. The diode has a max forward voltage of 0.875 V and can handle up to 2 A output current.

Median Price

$0.146

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,444 parts In-Stock

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$0.630

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$0.249

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$0.188

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4,444

$0.630

$0.249

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DigiKey

USA . 2,620 parts In-Stock

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$0.630

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$0.249

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$0.168

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$0.630

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Avnet

USA . 100,000 parts In-Stock

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EBV Elektronik

Germany . 87,500 parts In-Stock

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Verical

USA . 7,500 parts In-Stock

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$0.134

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Master Electronics

USA . 7,500 parts In-Stock

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$0.159

7,500

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Rochester

USA . 7,500 parts In-Stock

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$0.129

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$0.107

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$0.095

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$0.129

$0.107

$0.095

Arrow

USA . 2,500 parts In-Stock

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$0.114

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$0.114

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.152

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100

$0.152

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Digiode

USA . 2,427 parts In-Stock

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$0.408

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Chip Stock

USA . 112,774 parts In-Stock

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Vyrian

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NAC Semi

USA . 77,500 parts In-Stock

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$0.534

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Flip Electronics

USA . 10,000 parts In-Stock

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IBS Electronics

USA . 2,500 parts In-Stock

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$0.110

2,500

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$0.110

Distributors (Availability)

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Corohmni

South Africa . 107 parts In-Stock

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$0.089

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$0.089

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Aztec Data Supply Inc.

USA . 4,493 parts In-Stock

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$0.130

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Continental Prestige Electronics

USA . 6,018 parts In-Stock

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$0.152

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$0.149

6,018

$0.152

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$0.149

Argo Parts USA

USA . 3,199 parts In-Stock

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$0.152

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$0.147

3,199

$0.152

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Netroflash

USA . 2,000 parts In-Stock

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$0.152

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$0.144

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$0.141

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$0.152

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Ampacity Inc.

Singapore . 98,607 parts In-Stock

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$0.165

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Corphita

USA . 1,083 parts In-Stock

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Formix International (Excess)

India . 56,904 parts In-Stock

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RC Electronics

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 6,030 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 3,753 parts In-Stock

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TANS Electronics

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iodParts Technologies Inc.

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Lixinc

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Overview

Discover the cutting-edge NRVUS120VT3G by Onsemi, a high-quality rectifier diode perfect for high voltage ultra-fast recovery power applications. With a maximum forward voltage of 0.875V and maximum output current of 2A, this diode offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can trust in the superior quality and advanced technology of this product. Whether you're working on automotive, industrial, or consumer electronics projects, the NRVUS120VT3G will provide the value, benefits, and advantages you need to take your designs to the next level. Upgrade your power systems with Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.035 us

Allows for fast switching and efficient operation in high voltage applications.

Maximum Reverse Current: 2 uA

Ensures minimal power loss and heat generation in the diode.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments, increasing the reliability of the diode.

Maximum Output Current: 2 A

Capable of handling moderate to high current loads in power applications.

Technical Specifications

Diodes & Rectifiers NRVUS120VT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUS120VT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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