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NRVUD340T4G

Onsemi

NRVUD340T4G by Onsemi

NRVUD340T4G by Onsemi is a single rectifier diode with ultra-fast recovery power, featuring a max reverse recovery time of 0.05 us and max output current of 3A. It operates in temperatures ranging from -55 to 175 °C and has a max repetitive peak reverse voltage of 400V, making it suitable for various applications requiring high-speed switching capabilities.

Median Price

$0.306

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

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$0.293

1k+ parts

$0.243

10k+ parts

$0.216

2,500

-

$0.293

$0.243

$0.216

Verical

USA . 2,500 parts In-Stock

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$0.318

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$0.318

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Digiode

USA . 1,232 parts In-Stock

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$0.238

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$0.238

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Vyrian

USA . 8,664 parts In-Stock

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Flip Electronics

USA . 2,500 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.041

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$0.037

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$0.034

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-

200

$0.041

$0.037

$0.034

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Corphita

USA . 1,008 parts In-Stock

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$0.226

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$0.226

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Corohmni

South Africa . 369 parts In-Stock

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$0.251

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369

$0.251

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AZTECH Wire

Italy . 843 parts In-Stock

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$12.410

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843

$12.410

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Perfect Parts

USA . 12,880 parts In-Stock

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SupplyDigital Components

Austria . 6,275 parts In-Stock

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TANS Electronics

Latvia . 5,708 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

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Kulean Microsystems

USA . 971 parts In-Stock

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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Problanco Electronics

Mexico . 538 parts In-Stock

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Overview

Enhance your power applications with the NRVUD340T4G by Onsemi, a top-quality rectifier diode that offers ultra-fast recovery power for superior performance. Manufactured by Onsemi, a trusted name in the industry, this diode provides a maximum output current of 3A and a maximum forward voltage of 1.15V, making it ideal for a wide range of applications. With a maximum reverse recovery time of just 0.05us and a maximum reverse current of 5uA, this diode ensures efficiency and reliability. Trust Onsemi's expertise and choose the NRVUD340T4G for unbeatable value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection to the diode, making it durable and reliable in various applications.

Maximum Reverse Recovery Time: 0.05 us

Ultra fast recovery time ensures efficient switching and minimal loss, making it suitable for high-speed applications.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal power loss and improved efficiency in circuit operation.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for the diode to function reliably in both high and low temperature environments.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage capability makes it suitable for use in power supply and voltage regulation applications.

Technical Specifications

Diodes & Rectifiers NRVUD340T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.15 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUD340T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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