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NRVUS120VT3G-GA01

Onsemi

NRVUS120VT3G-GA01 by Onsemi

NRVUS120VT3G-GA01 by Onsemi is a single rectifier diode with a reverse test voltage of 200V and max reverse recovery time of 0.035us. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max output current of 2A.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

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Nova Conductors

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Digiode

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Aztec Data Supply Inc.

USA . 416 parts In-Stock

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$0.120

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Ampacity Inc.

Singapore . 1,643 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 710 parts In-Stock

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Kulean Microsystems

USA . 4,873 parts In-Stock

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Argo Parts USA

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Problanco Electronics

Mexico . 2,278 parts In-Stock

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TANS Electronics

Latvia . 2,061 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 1,241 parts In-Stock

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UHIMA Technologies

Türkiye . 985 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Corohmni

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Overview

Unlock the power of high voltage ultra-fast recovery with the NRVUS120VT3G-GA01 by Onsemi. Designed with top-quality materials and precision engineering, this rectifier diode offers unrivaled performance in a compact package. Perfect for a wide range of applications, this diode provides reliable operation with minimal reverse current and lightning-fast reverse recovery time. Experience the difference with Onsemi's industry-leading technology and elevate your projects to new heights of efficiency and reliability. Trust in the NRVUS120VT3G-GA01 to deliver exceptional value and unmatched benefits for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies installation and usage of the diode.

Maximum Reverse Recovery Time: 0.035 us

Ensures fast switching and efficient performance.

Maximum Reverse Current: 2 uA

Helps in maintaining low power consumption.

Maximum Operating Temperature: 175 °C

Allows the diode to operate in high-temperature environments.

Technical Specifications

Diodes & Rectifiers NRVUS120VT3G-GA01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.875 V

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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