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NSR05T304MXT5G

Onsemi

NSR05T304MXT5G by Onsemi

NSR05T304MXT5G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.435V and output current of 0.5A. It has a reverse test voltage of 30V, making it suitable for applications requiring fast switching speeds and low power dissipation in electronic circuits. The diode's compact chip carrier package and surface mount configuration make it ideal for space-constrained designs where high efficiency is crucial.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 4,369 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 230 parts In-Stock

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$15.700

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Problanco Electronics

Mexico . 8,320 parts In-Stock

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SupplyDigital Components

Austria . 4,183 parts In-Stock

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Kulean Microsystems

USA . 3,574 parts In-Stock

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TANS Electronics

Latvia . 2,798 parts In-Stock

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Corohmni

South Africa . 348 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Experience superior quality and performance with the Onsemi NSR05T304MXT5G diode rectifier. As a trusted manufacturer in the industry, Onsemi delivers reliable and efficient solutions for a wide range of applications. This Schottky diode offers customers a fast reverse recovery time, low reverse current, and high power dissipation capabilities. Whether you're looking to improve power efficiency or enhance circuit protection, this chip carrier package with nickel/palladium/gold terminals is the perfect choice. Invest in the Onsemi NSR05T304MXT5G and unlock the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it easier to incorporate into electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, reducing manufacturing time and costs.

Maximum Reverse Recovery Time: 0.015 us

The low reverse recovery time ensures efficient switching and reduces power losses in the circuit.

Maximum Reverse Current: 75 uA

The low reverse current helps in maintaining low power consumption and improves overall efficiency of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit boards and ensures a compact design.

Reverse Test Voltage: 30 V

The high reverse test voltage rating provides protection against voltage spikes and ensures the diode's reliability.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of wiring errors.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers high component density and excellent thermal performance, making it suitable for high-power applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for the diode to operate in a wide range of environments without any performance degradation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode can function reliably in extremely cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and ensures a secure connection.

Maximum Power Dissipation: 0.48 W

The high power dissipation rating allows the diode to handle high currents without overheating.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting AC to DC current, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.435 V

The low forward voltage drop minimizes power losses and improves the efficiency of the diode.

Maximum Output Current: 0.5 A

The high output current rating allows the diode to handle larger loads without any performance issues.

Technology: SCHOTTKY

Schottky diodes offer low forward voltage drop and fast switching speed, making them ideal for high-frequency applications.

Terminal Form: NO LEAD

The no lead terminal form simplifies the assembly process and reduces the risk of soldering errors.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage ensures protection against reverse voltage spikes and reliable operation in various circuit conditions.

Maximum Non Repetitive Peak Forward Current: 2.2 A

The high non-repetitive peak forward current rating allows the diode to handle short-term current surges without any damage.

Diode Element Material: SILICON

Silicon diodes offer high thermal stability and reliability, making them suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers NSR05T304MXT5G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.435 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Forward Current:

2.2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.48 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

75 uA

Maximum Reverse Recovery Time:

.015 us

Reverse Test Voltage:

30 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Trade Compliance

NSR05T304MXT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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