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RHRP15120-F102

Onsemi

RHRP15120-F102 by Onsemi

RHRP15120-F102 by Onsemi is a single rectifier diode with a reverse test voltage of 1200V and max output current of 15A. It features hyperfast soft recovery technology, 0.075us reverse recovery time, and 100uA reverse current. Ideal for applications requiring high power dissipation up to 100W in temperatures ranging from -65°C to 175°C.

Median Price

$0.745

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 655 parts In-Stock

1+ parts

$0.701

100+ parts

$0.659

1k+ parts

$0.596

10k+ parts

-

655

$0.701

$0.659

$0.596

-

DigiKey

USA . 2 parts In-Stock

1+ parts

$2.220

100+ parts

-

1k+ parts

-

10k+ parts

-

2

$2.220

-

-

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Verical

USA . 755 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.745

10k+ parts

-

755

-

-

$0.745

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,460 parts In-Stock

1+ parts

$0.666

100+ parts

-

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1,460

$0.666

-

-

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.872

100+ parts

-

1k+ parts

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700

$0.872

-

-

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Flip Electronics

USA . 48,800 parts In-Stock

1+ parts

-

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48,800

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Vyrian

USA . 6,185 parts In-Stock

1+ parts

-

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6,185

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 237 parts In-Stock

1+ parts

$0.094

100+ parts

-

1k+ parts

-

10k+ parts

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237

$0.094

-

-

-

Semicontronic

India . 180 parts In-Stock

1+ parts

$0.600

100+ parts

$0.585

1k+ parts

$0.582

10k+ parts

-

180

$0.600

$0.585

$0.582

-

Ampacity Inc.

Singapore . 19 parts In-Stock

1+ parts

$0.600

100+ parts

-

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19

$0.600

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-

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Corphita

USA . 2,378 parts In-Stock

1+ parts

$0.631

100+ parts

-

1k+ parts

-

10k+ parts

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2,378

$0.631

-

-

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Corohmni

South Africa . 460 parts In-Stock

1+ parts

$0.701

100+ parts

-

1k+ parts

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10k+ parts

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460

$0.701

-

-

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Argo Parts USA

USA . 1,576 parts In-Stock

1+ parts

$0.872

100+ parts

-

1k+ parts

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10k+ parts

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1,576

$0.872

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-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$0.872

100+ parts

-

1k+ parts

$0.828

10k+ parts

$0.811

50

$0.872

-

$0.828

$0.811

Continental Prestige Electronics

USA . 750 parts In-Stock

1+ parts

$1.580

100+ parts

$0.968

1k+ parts

$0.568

10k+ parts

-

750

$1.580

$0.968

$0.568

-

Microchip USA

USA . 333 parts In-Stock

1+ parts

$10.400

100+ parts

$10.340

1k+ parts

$10.300

10k+ parts

$10.270

333

$10.400

$10.340

$10.300

$10.270

SupplyDigital Components

Austria . 6,087 parts In-Stock

1+ parts

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6,087

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TANS Electronics

Latvia . 5,412 parts In-Stock

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5,412

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Kulean Microsystems

USA . 3,498 parts In-Stock

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3,498

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Problanco Electronics

Mexico . 2,314 parts In-Stock

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2,314

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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500

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UHIMA Technologies

Türkiye . 380 parts In-Stock

1+ parts

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100+ parts

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380

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Overview

Discover the RHRP15120-F102 by Onsemi, a top-of-the-line diode & rectifier that guarantees high-quality performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for applications requiring hyperfast soft recovery. With a maximum reverse test voltage of 1200V and a maximum output current of 15A, this diode offers exceptional value and benefits to customers looking for superior power dissipation and efficiency. Upgrade your electronic projects with the RHRP15120-F102 and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the product durable and long-lasting.

Config: SINGLE

Simplified design and easy to integrate into circuits.

Maximum Reverse Recovery Time: 0.075 us

Allows for fast switching and efficient performance.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss and high efficiency.

Package Shape: RECTANGULAR

Space-efficient design for easy installation and compact circuits.

Reverse Test Voltage: 1200 V

High reverse test voltage ensures reliable operation and protection against voltage spikes.

No. of Terminals: 2

Simplified connection and integration into circuits.

Package Style (Meter): FLANGE MOUNT

Easy mounting and installation in various applications.

Application: HYPERFAST SOFT RECOVERY

Suitable for high-speed applications with soft recovery characteristics.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures good solderability and reliable connections.

Terminal Position: SINGLE

Simplified connection and ease of use in circuits.

Case Connection: CATHODE

Clearly designated terminal connection for easy installation.

Maximum Power Dissipation: 100 W

Can handle high power levels without overheating.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying current, suitable for power supply applications.

Maximum Forward Voltage (VF): 3.2 V

Low forward voltage drop for efficient power conversion.

Maximum Output Current: 15 A

High output current capability for handling large loads.

Technology: AVALANCHE

Avalanche technology ensures reliable and stable performance under high voltage conditions.

Terminal Form: THROUGH-HOLE

Suitable for through-hole mounting for secure and reliable connections.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Can handle high reverse voltages for protection and reliable operation.

Maximum Non Repetitive Peak Forward Current: 200 A

High peak forward current capability for surge protection and reliability.

Diode Element Material: SILICON

Silicon material ensures high efficiency and reliability in rectification applications.

Technical Specifications

Diodes & Rectifiers RHRP15120-F102 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HYPERFAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

3.2 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

100 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.075 us

Reverse Test Voltage:

1200 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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