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RHRP1560-F102

Onsemi

RHRP1560-F102 by Onsemi

RHRP1560-F102 by Onsemi is a single rectifier diode with a reverse recovery time of 0.04 us and max reverse current of 100 uA. It operates in hyper ultra-fast soft recovery applications, with a max forward voltage of 2.1 V and output current of 15 A.

Median Price

$1.222

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,070 parts In-Stock

1+ parts

-

100+ parts

$1.200

1k+ parts

$0.996

10k+ parts

$0.888

23,070

-

$1.200

$0.996

$0.888

Verical

USA . 23,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.245

10k+ parts

$1.110

23,070

-

-

$1.245

$1.110

Flip Electronics (Authorized)

USA . 795 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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795

-

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.868

100+ parts

-

1k+ parts

-

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50

$0.868

-

-

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Digiode

USA . 2,335 parts In-Stock

1+ parts

$0.932

100+ parts

-

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2,335

$0.932

-

-

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Vyrian

USA . 6,802 parts In-Stock

1+ parts

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100+ parts

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6,802

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Flip Electronics

USA . 795 parts In-Stock

1+ parts

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795

-

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 204 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

-

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-

204

$0.044

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.186

100+ parts

$0.169

1k+ parts

$0.153

10k+ parts

-

40

$0.186

$0.169

$0.153

-

Semicontronic

India . 14,526 parts In-Stock

1+ parts

$0.830

100+ parts

$0.809

1k+ parts

$0.805

10k+ parts

-

14,526

$0.830

$0.809

$0.805

-

Ampacity Inc.

Singapore . 14,438 parts In-Stock

1+ parts

$0.830

100+ parts

-

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-

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14,438

$0.830

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Corohmni

South Africa . 243 parts In-Stock

1+ parts

$0.834

100+ parts

-

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243

$0.834

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.851

100+ parts

-

1k+ parts

$0.817

10k+ parts

-

2,000

$0.851

-

$0.817

-

Continental Prestige Electronics

USA . 4,951 parts In-Stock

1+ parts

$0.868

100+ parts

-

1k+ parts

-

10k+ parts

$0.851

4,951

$0.868

-

-

$0.851

Argo Parts USA

USA . 3,938 parts In-Stock

1+ parts

$0.868

100+ parts

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3,938

$0.868

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Corphita

USA . 1,548 parts In-Stock

1+ parts

$0.883

100+ parts

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1,548

$0.883

-

-

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Andel Nordic

Denmark . 443 parts In-Stock

1+ parts

$9.725

100+ parts

-

1k+ parts

$9.336

10k+ parts

$9.336

443

$9.725

-

$9.336

$9.336

AZTECH Wire

Italy . 1,195 parts In-Stock

1+ parts

$9.880

100+ parts

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1,195

$9.880

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QUARKTWIN TECHNOLOGY LTD

USA . 22,219 parts In-Stock

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22,219

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Kulean Microsystems

USA . 6,005 parts In-Stock

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6,005

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SupplyDigital Components

Austria . 5,419 parts In-Stock

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5,419

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TANS Electronics

Latvia . 3,942 parts In-Stock

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3,942

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Problanco Electronics

Mexico . 3,820 parts In-Stock

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3,820

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 933 parts In-Stock

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933

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Perfect Parts

USA . 10 parts In-Stock

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10

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Overview

Upgrade your electronic projects with the RHRP1560-F102 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that guarantee superior performance and reliability. The RHRP1560-F102 is designed for hyper ultra-fast soft recovery applications, providing a maximum output current of 15 A and a maximum power dissipation of 100 W. Whether you're working on power supplies, inverters, or motor drives, this rectifier diode offers unmatched efficiency and precision. Trust Onsemi to bring innovation and excellence to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it user-friendly for technicians.

Maximum Reverse Recovery Time: 0.04 us

The ultra-fast reverse recovery time ensures efficient performance and minimizes energy loss in the diode.

Maximum Reverse Current: 100 uA

The low reverse current improves the overall efficiency and reliability of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into electronic systems.

Reverse Test Voltage: 600 V

With a high reverse test voltage, this diode can handle high voltage applications with ease.

No. of Terminals: 2

The two terminals provide a straightforward connection setup, ideal for basic circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers a sturdy and secure installation option for the diode.

Application: HYPER ULTRA FAST SOFT RECOVERY

Designed for hyper fast soft recovery applications, this diode ensures smooth and efficient performance in high-speed circuits.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand extreme conditions without compromising performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the diode to function reliably in cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and ensures a reliable electrical connection for the diode.

Terminal Position: SINGLE

The single terminal position simplifies installation and helps prevent wiring errors.

Case Connection: CATHODE

The cathode case connection offers convenience for circuit design and installation.

Maximum Power Dissipation: 100 W

The high power dissipation capacity of this diode allows it to handle high power applications without overheating.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is suitable for converting alternating current (AC) to direct current (DC) in various electronic devices.

Maximum Forward Voltage (VF): 2.1 V

The low forward voltage drop of 2.1V minimizes power loss and ensures efficient operation of the diode.

Maximum Output Current: 15 A

With a high output current capacity of 15A, this diode can handle heavy loads in electronic circuits.

Technology: AVALANCHE

The avalanche technology used in this diode allows for high power handling and ruggedness in extreme conditions.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a reliable connection and easy mounting in circuit boards.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating ensures the diode can handle high voltage spikes without damage.

Maximum Non Repetitive Peak Forward Current: 200 A

With a high peak forward current rating of 200A, this diode can handle short-term current spikes effectively.

Diode Element Material: SILICON NITRIDE

The use of silicon nitride as the diode element material provides stability and reliability in various operating conditions.

Technical Specifications

Diodes & Rectifiers RHRP1560-F102 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE

Application:

HYPER ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON NITRIDE

Diode Type:

Maximum Forward Voltage (VF):

2.1 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

100 W

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.04 us

Reverse Test Voltage:

600 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

RHRP1560-F102 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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