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NCD225E75F8M1

Onsemi

NCD225E75F8M1 by Onsemi

NCD225E75F8M1 by Onsemi is a single diode with fast soft recovery, ideal for high-power applications. It features a max output current of 225A, reverse test voltage of 750V, and max reverse recovery time of 0.223us. This rectifier diode operates b/w -40 to 175 °C and meets AEC-Q101 standards.

Median Price

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Lifecycle Status

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Vyrian

USA . 8,990 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 730 parts In-Stock

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$12.590

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730

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Kulean Microsystems

USA . 6,950 parts In-Stock

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Problanco Electronics

Mexico . 6,292 parts In-Stock

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SupplyDigital Components

Austria . 5,651 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 711 parts In-Stock

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Overview

Experience the exceptional quality and reliability of the NCD225E75F8M1 by Onsemi, a leading manufacturer in the field of Diodes & Rectifiers. This single-config surface mount diode offers a fast soft recovery application, making it perfect for a wide range of electronic devices. With a maximum output current of 225A and a maximum reverse test voltage of 750V, this rectifier diode provides high performance and efficiency. Trust Onsemi to deliver top-notch products that exceed expectations, ensuring you get the value and benefits you deserve. Elevate your projects with the NCD225E75F8M1 and experience unparalleled results.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to use and simple to wire in circuits.

Surface Mount: YES

Surface mount capability allows for easy placement on PCBs, saving space and improving efficiency.

Maximum Reverse Recovery Time: 0.223 us

Fast reverse recovery time ensures efficient operation and reduces power loss.

Maximum Reverse Current: 30 uA

Low reverse current minimizes power dissipation and improves overall efficiency.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to mount and secure in place.

Reverse Test Voltage: 750 V

High reverse test voltage ensures durability and reliability in high voltage applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces complexity.

Package Style (Meter): UNCASED CHIP

Uncased chip package style provides protection and stability for the diode element.

Application: FAST SOFT RECOVERY

Fast soft recovery diode is ideal for high frequency applications that require efficient switching.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability under various operating conditions.

Minimum Operating Temperature: -40 °C

Wide range of operating temperature allows for flexibility in usage in different environments.

Minimum Breakdown Voltage: 750 V

High minimum breakdown voltage protects the diode from overvoltage conditions.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode design makes it suitable for converting AC to DC currents efficiently.

Maximum Forward Voltage (VF): 1.95 V

Low forward voltage drop minimizes power loss and improves efficiency in forward conduction.

Maximum Output Current: 225 A

High output current capability allows for handling heavy loads and high power applications.

Terminal Form: NO LEAD

No lead terminal form simplifies the mounting process and reduces installation time.

Maximum Repetitive Peak Reverse Voltage: 750 V

High repetitive peak reverse voltage rating ensures long-term reliability and durability.

Diode Element Material: SILICON

Silicon diode element material provides high efficiency and reliability for various applications.

Technical Specifications

Diodes & Rectifiers NCD225E75F8M1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST SOFT RECOVERY

Minimum Breakdown Voltage:

750 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.95 V

JESD-30 Code:

R-XXUC-N2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

225 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

750 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.223 us

Reverse Test Voltage:

750 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

NCD225E75F8M1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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