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SBRD81035CTLG-VF01

Onsemi

SBRD81035CTLG-VF01 by Onsemi

SBRD81035CTLG-VF01 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.56V and a max output current of 5A. It is commonly used in power applications, offering a min breakdown voltage of 35V and operating temperatures ranging from -55°C to 150°C.

Median Price

$1.660

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 160 parts In-Stock

1+ parts

$1.660

100+ parts

$1.050

1k+ parts

$0.893

10k+ parts

$0.652

160

$1.660

$1.050

$0.893

$0.652

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$1.000

100+ parts

-

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-

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450

$1.000

-

-

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Digiode

USA . 1,180 parts In-Stock

1+ parts

$1.577

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1,180

$1.577

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Vyrian

USA . 4,599 parts In-Stock

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4,599

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 38,767 parts In-Stock

1+ parts

$0.180

100+ parts

-

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38,767

$0.180

-

-

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Corohmni

South Africa . 466 parts In-Stock

1+ parts

$0.960

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-

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466

$0.960

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.980

100+ parts

-

1k+ parts

$0.941

10k+ parts

-

500

$0.980

-

$0.941

-

Argo Parts USA

USA . 2,679 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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2,679

$1.000

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Continental Prestige Electronics

USA . 46 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

-

10k+ parts

$0.980

46

$1.000

-

-

$0.980

Ampacity Inc.

Singapore . 160 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

-

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160

$1.410

-

-

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Semicontronic

India . 160 parts In-Stock

1+ parts

$1.410

100+ parts

$1.375

1k+ parts

$1.368

10k+ parts

-

160

$1.410

$1.375

$1.368

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Corphita

USA . 460 parts In-Stock

1+ parts

$1.494

100+ parts

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460

$1.494

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AZTECH Wire

Italy . 772 parts In-Stock

1+ parts

$18.550

100+ parts

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772

$18.550

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Component Stockers USA

USA . 590 parts In-Stock

1+ parts

$99.990

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590

$99.990

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TANS Electronics

Latvia . 4,486 parts In-Stock

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4,486

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Kulean Microsystems

USA . 3,825 parts In-Stock

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3,825

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Problanco Electronics

Mexico . 880 parts In-Stock

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880

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Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

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500

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SupplyDigital Components

Austria . 424 parts In-Stock

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424

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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131

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Overview

Experience the exceptional quality and reliability of Onsemi with the SBRD81035CTLG-VF01 diode. Designed for power applications, this rectifier diode offers incredible performance and value. With a maximum reverse test voltage of 35V and a maximum output current of 5A, it delivers optimal functionality in any circuit. The small outline package shape and gull wing terminal form make it easy to integrate into your designs. Trust Onsemi's expertise and craftsmanship to provide you with a superior product that exceeds your expectations. Upgrade your electronic projects with the SBRD81035CTLG-VF01 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the diodes, ensuring durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy and efficient circuit design and connection.

Maximum Reverse Current: 2000 uA

High maximum reverse current capability ensures stable performance and protection against reverse voltage conditions.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration in various electronic applications.

Reverse Test Voltage: 35 V

High reverse test voltage of 35V provides a safety margin for voltage reverse conditions, enhancing the reliability of the product.

Terminal Position: SINGLE

Single terminal position simplifies the connection and installation of the diode in circuits.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of alternating current (AC) to direct current (DC), making it suitable for power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speed, making the diode ideal for high-frequency power applications.

Technical Specifications

Diodes & Rectifiers SBRD81035CTLG-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

35 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

35 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD81035CTLG-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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