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SBRD8330G

Onsemi

SBRD8330G by Onsemi

SBRD8330G by Onsemi is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.7V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for fast recovery power applications. This single-configured diode comes in a small outline package with matte tin terminal finish for surface mount assembly.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 12,825 parts In-Stock

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DigiKey

USA . 1,050 parts In-Stock

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$0.410

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$0.410

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Vyrian

USA . 1,494 parts In-Stock

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$0.540

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Chip Stock

USA . 48,000 parts In-Stock

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Flip Electronics

USA . 12,825 parts In-Stock

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Digiode

USA . 758 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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$0.540

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TANS Electronics

Latvia . 5,937 parts In-Stock

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Problanco Electronics

Mexico . 4,203 parts In-Stock

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Corphita

USA . 2,310 parts In-Stock

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SupplyDigital Components

Austria . 2,129 parts In-Stock

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Kulean Microsystems

USA . 338 parts In-Stock

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UHIMA Technologies

Türkiye . 314 parts In-Stock

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Overview

Discover the high-quality SBRD8330G diode by Onsemi, designed for fast recovery power applications. With a maximum output current of 3A and a maximum forward voltage of 0.7V, this Schottky technology diode offers superior performance and reliability. Onsemi, a trusted manufacturer, ensures top-notch quality and durability in their products. Ideal for a variety of electronic devices, the SBRD8330G is a valuable addition to any project, providing efficient power management and enhanced functionality. Choose Onsemi for cutting-edge technology that delivers exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Being a single configuration diode simplifies the circuit design and makes it easier to integrate into electronic systems.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 200 uA

With a low maximum reverse current, this diode offers efficient performance and helps minimize power losses in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on the PCB, facilitating the assembly process.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, this diode is ideal for high-speed and high-frequency circuits, ensuring quick response times.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, making it suitable for various environments.

Technology: SCHOTTKY

The Schottky technology used in this diode provides low forward voltage drop and fast switching speeds, making it ideal for high-efficiency applications.

Technical Specifications

Diodes & Rectifiers SBRD8330G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

200 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8330G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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