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SBRD81035CTLG

Onsemi

SBRD81035CTLG by Onsemi

SBRD81035CTLG by Onsemi is a Schottky rectifier diode with common cathode configuration. It has a max output current of 5A and forward voltage of 0.56V, suitable for power applications. With a reverse test voltage of 35V and operating temperature range from -55 to 150°C, it is ideal for high-power circuits.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.986

10k+ parts

-

1,008

-

-

$0.986

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Rochester

USA . 996 parts In-Stock

1+ parts

-

100+ parts

$1.050

1k+ parts

$0.872

10k+ parts

$0.777

996

-

$1.050

$0.872

$0.777

DigiKey

USA . 996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.310

10k+ parts

-

996

-

-

$1.310

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Verical

USA . 996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.089

10k+ parts

$0.971

996

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-

$1.089

$0.971

Flip Electronics (Authorized)

USA . 825 parts In-Stock

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825

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Distributors (In-Stock)

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Digiode

USA . 104 parts In-Stock

1+ parts

$0.861

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104

$0.861

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Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$0.913

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28

$0.913

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Chip Stock

USA . 4,010 parts In-Stock

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4,010

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Flip Electronics

USA . 825 parts In-Stock

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825

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DigiKey Marketplace

USA . 825 parts In-Stock

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825

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Vyrian

USA . 615 parts In-Stock

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615

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,098 parts In-Stock

1+ parts

$0.010

100+ parts

-

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4,098

$0.010

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Semicontronic

India . 604 parts In-Stock

1+ parts

$0.770

100+ parts

$0.751

1k+ parts

$0.747

10k+ parts

-

604

$0.770

$0.751

$0.747

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Corphita

USA . 284 parts In-Stock

1+ parts

$0.815

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284

$0.815

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Corohmni

South Africa . 333 parts In-Stock

1+ parts

$0.895

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333

$0.895

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Argo Parts USA

USA . 559 parts In-Stock

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$0.913

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559

$0.913

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Ampacity Inc.

Singapore . 686 parts In-Stock

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$1.680

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686

$1.680

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Microchip USA

USA . 470 parts In-Stock

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$5.655

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470

$5.655

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TANS Electronics

Latvia . 7,696 parts In-Stock

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7,696

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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SupplyDigital Components

Austria . 3,836 parts In-Stock

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3,836

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Kulean Microsystems

USA . 2,237 parts In-Stock

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2,237

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Problanco Electronics

Mexico . 2,080 parts In-Stock

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2,080

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Continental Prestige Electronics

USA . 1,008 parts In-Stock

1+ parts

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100+ parts

$0.873

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1,008

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$0.873

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UHIMA Technologies

Türkiye . 149 parts In-Stock

1+ parts

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149

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Overview

Discover the high-quality SBRD81035CTLG diode & rectifier by Onsemi, designed for power applications with a common cathode configuration. With a maximum reverse voltage of 35V and a peak output current of 5A, this small outline package offers reliability and performance. Whether you're powering up your electronics or automotive systems, this Schottky technology diode delivers efficiency and durability. Trust Onsemi's reputation for excellence and choose the SBRD81035CTLG for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the diode lightweight, durable, and resistant to moisture and corrosion, ensuring long-term reliability.

Surface Mount: YES

Being surface mount allows for easy and efficient placement on circuit boards, saving space and making assembly quicker.

Maximum Reverse Current: 2000 uA

High maximum reverse current capacity ensures efficient and reliable operation in reverse bias conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for power applications, making this product ideal for power-related circuits and systems.

Technology: SCHOTTKY

Schottky technology provides lower forward voltage drop and faster switching speed, making this diode efficient for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SBRD81035CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

35 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

35 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD81035CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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