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SBRD81035CTLT4G

Onsemi

SBRD81035CTLT4G by Onsemi

SBRD81035CTLT4G by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 35V. It is designed for power applications with a max output current of 5A and forward voltage of 0.56V. The diode operates b/w -55 to 150 °C, making it suitable for various electronic devices.

Median Price

$2.240

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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DigiKey

USA . 2,500 parts In-Stock

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Vyrian

USA . 11,846 parts In-Stock

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Flip Electronics

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ComSIT Distribution GmbH

Germany . 125 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.077

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$0.070

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$0.063

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AZTECH Wire

Italy . 1,027 parts In-Stock

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$16.780

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Kulean Microsystems

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SupplyDigital Components

Austria . 3,439 parts In-Stock

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GreenTree Electronics

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Problanco Electronics

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Corphita

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TANS Electronics

Latvia . 477 parts In-Stock

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Corohmni

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UHIMA Technologies

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Overview

Discover the power of Onsemi's SBRD81035CTLT4G diode rectifier, designed for high-quality performance in power applications. With a maximum reverse voltage of 35V and a maximum output current of 5A, this Schottky technology diode offers reliability and efficiency. Ideal for a range of power applications, this diode provides customers with a compact, durable solution that ensures optimal performance. Trust Onsemi's expertise and innovation to deliver superior quality and value with the SBRD81035CTLT4G diode rectifier.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring long-lasting performance.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient circuit design and easy integration into existing systems.

Maximum Reverse Current: 2000 uA

Ensures reliability and prevents damage due to excessive current flow in the reverse direction.

Surface Mount: YES

Facilitates easy installation on PCBs, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various power applications.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching speed, ideal for power applications.

Technical Specifications

Diodes & Rectifiers SBRD81035CTLT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

35 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

35 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD81035CTLT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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