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SBRD8320G-VF01

Onsemi

SBRD8320G-VF01 by Onsemi

SBRD8320G-VF01 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 3A. It operates in temperatures ranging from -65 °C to 175°C, making it suitable for fast recovery power applications. This single-configured diode comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.421

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.210

7,575

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-

$0.210

Flip Electronics (Authorized)

USA . 7,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,575

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Rochester

USA . 5,775 parts In-Stock

1+ parts

-

100+ parts

$0.421

1k+ parts

$0.350

10k+ parts

$0.312

5,775

-

$0.421

$0.350

$0.312

Verical

USA . 5,775 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.437

10k+ parts

$0.390

5,775

-

-

$0.437

$0.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,189 parts In-Stock

1+ parts

$0.344

100+ parts

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2,189

$0.344

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Vyrian

USA . 2,454 parts In-Stock

1+ parts

$0.362

100+ parts

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2,454

$0.362

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Chip Stock

USA . 36,000 parts In-Stock

1+ parts

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100+ parts

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36,000

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Flip Electronics

USA . 7,575 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,575

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,288 parts In-Stock

1+ parts

$0.326

100+ parts

-

1k+ parts

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10k+ parts

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2,288

$0.326

-

-

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Corohmni

South Africa . 150 parts In-Stock

1+ parts

$0.362

100+ parts

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150

$0.362

-

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Kulean Microsystems

USA . 6,616 parts In-Stock

1+ parts

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100+ parts

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6,616

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Continental Prestige Electronics

USA . 5,775 parts In-Stock

1+ parts

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100+ parts

$0.430

1k+ parts

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5,775

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$0.430

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SupplyDigital Components

Austria . 3,695 parts In-Stock

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3,695

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TANS Electronics

Latvia . 980 parts In-Stock

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980

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Problanco Electronics

Mexico . 952 parts In-Stock

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952

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UHIMA Technologies

Türkiye . 597 parts In-Stock

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597

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Discover the power and efficiency of the SBRD8320G-VF01 by Onsemi! This high-quality diode rectifier offers fast recovery power for a wide range of applications, making it a versatile choice for your electronic projects. With Onsemi's reputation for reliability and innovation, you can trust that this product will deliver top-notch performance. Say goodbye to slow response times and hello to seamless operation with the SBRD8320G-VF01. Upgrade your electronics today and experience the benefits for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplifies the circuit design and installation, making it easier to work with.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and facilitating automated assembly.

Maximum Reverse Current: 200 uA

Ensures efficient operation by minimizing reverse current leakage.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment within circuits and PCBs.

No. of Terminals: 2

Simplifies connections and reduces complexity in circuitry.

Package Style (Meter): SMALL OUTLINE

Helps in saving space on the PCB and allows for high-density mounting.

Application: FAST RECOVERY POWER

Suitable for applications requiring fast recovery and high power handling capabilities.

Maximum Operating Temperature: 175 °C

Allows for operation in high-temperature environments without performance degradation.

Minimum Operating Temperature: -65 °C

Ensures reliable operation even in extremely cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides good solderability and electrical conductivity for secure connections.

Terminal Position: SINGLE

Simplifies installation and reduces chances of error in connections.

Case Connection: CATHODE

Facilitates easy identification of the cathode side for correct polarity connection.

Maximum Time At Peak Reflow Temperature (s): 30

Provides guidance for proper reflow soldering to prevent damage to the diode during assembly.

Peak Reflow Temperature °C: 260

Optimal reflow temperature for ensuring secure and reliable solder joints.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.7 V

Provides low voltage drop during forward conduction, minimizing power loss.

Maximum Output Current: 3 A

Capable of handling high current loads, making it suitable for power applications.

Technology: SCHOTTKY

Features Schottky diode technology for fast switching and low forward voltage drop.

Terminal Form: GULL WING

Facilitates easy soldering and secure connections during assembly.

Maximum Repetitive Peak Reverse Voltage: 20 V

Withstands reverse voltage up to 20 V, suitable for various circuit protection applications.

Maximum Non Repetitive Peak Forward Current: 75 A

Capable of handling high peak currents, ensuring reliability under transient conditions.

Diode Element Material: SILICON

Utilizes silicon material for the diode element, providing reliable performance and durability.

Technical Specifications

Diodes & Rectifiers SBRD8320G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8320G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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