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SBRD10200

Sangdest Microelectronics (Nanjing)

SBRD10200 by Sangdest Microelectronics (Nanjing)

SBRD10200 by Sangdest Microelectronics is a Schottky rectifier diode with a max reverse voltage of 200V and forward voltage of 0.95V. It operates b/w -55°C to 150°C, suitable for surface mount applications requiring high current handling up to 100A.

Median Price

$0.189

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 36,334 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.189

36,334

-

-

-

$0.189

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.214

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.214

-

-

-

Vyrian

USA . 32,715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

32,715

-

-

-

-

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,189 parts In-Stock

1+ parts

$0.214

100+ parts

-

1k+ parts

-

10k+ parts

$0.209

2,189

$0.214

-

-

$0.209

Argo Parts USA

USA . 1,393 parts In-Stock

1+ parts

$0.214

100+ parts

-

1k+ parts

-

10k+ parts

$0.207

1,393

$0.214

-

-

$0.207

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.209

1k+ parts

$0.203

10k+ parts

$0.199

100

-

$0.209

$0.203

$0.199

Overview

Unlock the power of cutting-edge technology with Sangdest Microelectronics (Nanjing) SBRD10200, a top-notch Schottky rectifier diode offering unparalleled quality and reliability. Designed for efficiency and precision, this diode is perfect for a wide range of applications. With a maximum forward voltage of just 0.95V and a maximum repetitive peak reverse voltage of 200V, the SBRD10200 ensures optimal performance in any setting. Trust Sangdest Microelectronics (Nanjing) for top-of-the-line diodes and rectifiers that deliver value and benefits to customers like never before.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the diode, ensuring long-lasting performance.

Config:

SINGLE - Simple and easy to use, perfect for basic diode applications.

Surface Mount:

YES - Allows for easy and convenient installation on a circuit board.

Maximum Reverse Current:

1000 uA - Ensures efficient operation by preventing excessive reverse current flow.

Package Shape:

RECTANGULAR - Space-saving design for efficient PCB layout.

No. of Terminals:

2 - Basic design for straightforward connections.

Package Style (Meter):

SMALL OUTLINE - Compact size for applications with limited space.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures for reliable performance in various environments.

Minimum Operating Temperature:

55 °C - Can operate in cold temperatures without issues.

Terminal Finish:

TIN - Provides a reliable and stable terminal connection.

Terminal Position:

SINGLE - Easy to connect in a circuit.

Case Connection:

CATHODE - Clearly marked for correct orientation during installation.

Diode Type:

RECTIFIER DIODE - Ideal for converting AC to DC current with low forward voltage drop.

Maximum Forward Voltage (VF):

0.95 V - Low voltage drop for energy-efficient operation.

Technology:

SCHOTTKY - Fast switching speed and low power loss for high performance.

Terminal Form:

GULL WING - Convenient shape for soldering onto a PCB.

Maximum Repetitive Peak Reverse Voltage:

200 V - Can handle high reverse voltage spikes without damage.

Maximum Non Repetitive Peak Forward Current:

100 A - Can handle high current surges without failing.

Diode Element Material:

SILICON - Reliable material for stable and consistent diode performance.

Technical Specifications

Diodes & Rectifiers SBRD10200 attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

1000 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBRD10200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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