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SBRD8350G

Onsemi

SBRD8350G by Onsemi

The Onsemi SBRD8350G is a single Schottky rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 50V. It is designed for fast recovery power applications, operates b/w -65 to 175 °C, and features a small outline package style suitable for surface mount assembly.

Median Price

$0.546

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,800 parts In-Stock

1+ parts

-

100+ parts

$0.527

1k+ parts

$0.437

10k+ parts

$0.390

5,800

-

$0.527

$0.437

$0.390

DigiKey

USA . 5,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.660

10k+ parts

-

5,800

-

-

$0.660

-

Verical

USA . 5,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.546

10k+ parts

$0.487

5,800

-

-

$0.546

$0.487

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,327 parts In-Stock

1+ parts

$0.430

100+ parts

-

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1,327

$0.430

-

-

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Vyrian

USA . 1,929 parts In-Stock

1+ parts

$0.453

100+ parts

-

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1,929

$0.453

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.156

100+ parts

$0.155

1k+ parts

$0.148

10k+ parts

-

200

$0.156

$0.155

$0.148

-

Corphita

USA . 165 parts In-Stock

1+ parts

$0.408

100+ parts

-

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-

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165

$0.408

-

-

-

Corohmni

South Africa . 343 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

-

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343

$0.453

-

-

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TANS Electronics

Latvia . 5,930 parts In-Stock

1+ parts

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5,930

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Kulean Microsystems

USA . 5,801 parts In-Stock

1+ parts

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100+ parts

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5,801

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Continental Prestige Electronics

USA . 5,800 parts In-Stock

1+ parts

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100+ parts

$0.436

1k+ parts

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5,800

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$0.436

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Problanco Electronics

Mexico . 2,292 parts In-Stock

1+ parts

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2,292

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SupplyDigital Components

Austria . 442 parts In-Stock

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442

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UHIMA Technologies

Türkiye . 111 parts In-Stock

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111

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Overview

Experience the superior quality and reliability of Onsemi with the SBRD8350G diode. This product is designed for fast recovery power applications, making it perfect for a wide range of electronics projects. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 50V, this diode offers exceptional performance and efficiency. Trust in Onsemi's reputation for excellence and choose the SBRD8350G for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation, making the product durable and safe.

Maximum Reverse Current: 200 uA

Low reverse current allows for efficient performance and minimal power loss.

Maximum Operating Temperature: 175 °C

Wide operating temperature range ensures reliability in various environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying circuits, ensuring optimal performance in power applications.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop results in minimal power dissipation and improved efficiency.

Technology: SCHOTTKY

Schottky diodes offer faster switching speeds and lower forward voltage drop compared to other diode technologies.

Technical Specifications

Diodes & Rectifiers SBRD8350G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

200 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBRD8350G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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