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SBRD8340G

Onsemi

SBRD8340G by Onsemi

SBRD8340G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 40V. It is designed for fast recovery power applications, operates b/w -65 to 175 °C, and features a small outline package style for surface mount assembly.

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1k+

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USA . 4,427 parts In-Stock

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Component Stockers USA

USA . 14,612 parts In-Stock

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$6.900

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AZTECH Wire

Italy . 293 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

USA . 14,799 parts In-Stock

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SupplyDigital Components

Austria . 6,367 parts In-Stock

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TANS Electronics

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Kulean Microsystems

USA . 3,795 parts In-Stock

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Problanco Electronics

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Corphita

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Overview

Discover the high-quality SBRD8340G diode by Onsemi, a leader in the industry. Perfect for fast recovery power applications, this Schottky rectifier diode offers a maximum forward voltage of just 0.7V and can handle up to 3A of output current. With a wide operating temperature range and AEC-Q101 reference standard compliance, this diode is reliable and efficient. Trust Onsemi's expertise and innovation to provide you with the best solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, making it durable and long-lasting.

Config: SINGLE

Single configuration simplifies the circuit design and makes the diode easy to integrate into various applications.

Surface Mount: YES

Surface mount capability allows for easy and compact placement on a PCB, saving space and improving assembly efficiency.

Maximum Reverse Current: 200 uA

Low reverse current ensures efficient operation and minimizes power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy compatibility with different electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces chances of error during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting of components.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications where quick switching and efficient energy transfer are essential.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures stable performance in demanding environments.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures allows for use in both extreme cold and hot conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring reliable connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures correct orientation of the diode in the circuit.

Case Connection: CATHODE

Cathode case connection makes it easy to identify polarity and ensure proper connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes the risk of overheating and damage during the soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and strong mechanical connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC power with low forward voltage drop.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop minimizes power loss and improves efficiency in the circuit.

Maximum Output Current: 3 A

High output current rating allows for efficient power handling and reliable operation in various applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop for efficient power conversion.

Terminal Form: GULL WING

Gull wing terminal form enables easy surface mount soldering and secure mechanical connection.

Maximum Repetitive Peak Reverse Voltage: 40 V

High reverse voltage rating provides overvoltage protection and ensures reliable operation in the circuit.

Maximum Non Repetitive Peak Forward Current: 75 A

High non-repetitive peak forward current rating allows for short-term power surges without damage to the diode.

Diode Element Material: SILICON

Silicon material for diode element provides good conductivity and thermal stability for reliable performance.

Technical Specifications

Diodes & Rectifiers SBRD8340G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

200 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8340G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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