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SBRD8320T4G-VF01

Onsemi

SBRD8320T4G-VF01 by Onsemi

SBRD8320T4G-VF01 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 3A. It operates in fast recovery power applications, with a max reverse current of 200uA and max repetitive peak reverse voltage of 20V. The diode is designed for surface mount installation in small outline packages.

Median Price

$0.437

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.421

1k+ parts

$0.350

10k+ parts

$0.312

2,500

-

$0.421

$0.350

$0.312

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.530

10k+ parts

-

2,500

-

-

$0.530

-

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.437

10k+ parts

$0.390

2,500

-

-

$0.437

$0.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 765 parts In-Stock

1+ parts

$0.344

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-

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765

$0.344

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Chip Stock

USA . 44,000 parts In-Stock

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44,000

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Vyrian

USA . 4,042 parts In-Stock

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4,042

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Distributors (Availability)

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Corphita

USA . 572 parts In-Stock

1+ parts

$0.326

100+ parts

-

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572

$0.326

-

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Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.362

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177

$0.362

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Component Stockers USA

USA . 2,335 parts In-Stock

1+ parts

$0.370

100+ parts

$0.350

1k+ parts

$0.310

10k+ parts

-

2,335

$0.370

$0.350

$0.310

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AZTECH Wire

Italy . 1,176 parts In-Stock

1+ parts

$20.950

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1,176

$20.950

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QUARKTWIN TECHNOLOGY LTD

USA . 17,088 parts In-Stock

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TANS Electronics

Latvia . 7,081 parts In-Stock

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Problanco Electronics

Mexico . 5,221 parts In-Stock

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SupplyDigital Components

Austria . 4,283 parts In-Stock

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4,283

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

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$0.430

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$0.430

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Kulean Microsystems

USA . 2,051 parts In-Stock

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Overview

Experience the next level of power efficiency and reliability with the SBRD8320T4G-VF01 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality diodes and rectifiers that are perfect for fast recovery power applications. With a maximum forward voltage of 0.7V and an output current of 3A, this product offers unmatched performance and durability. Say goodbye to overheating and hello to seamless operation with this Schottky technology diode. Upgrade your systems today with the SBRD8320T4G-VF01 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and resistance to environmental factors, making this product suitable for various applications.

Maximum Reverse Current: 200 uA

Low maximum reverse current allows for efficient operation and helps in reducing power losses in the circuit.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, this diode provides quick response times and high efficiency in power conversion.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers low forward voltage drop and fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers SBRD8320T4G-VF01 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

200 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBRD8320T4G-VF01 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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