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NRVTS560ETFSTWG

Onsemi

NRVTS560ETFSTWG by Onsemi

NRVTS560ETFSTWG by Onsemi is a Schottky rectifier diode with 60V reverse test voltage and 5A max output current. It is ideal for efficiency applications, operates at -55 °C, and has a peak reflow temp of 260°C.

Median Price

-

Lifecycle Status

EOL

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2

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1k+

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Vyrian

USA . 4,518 parts In-Stock

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AZTECH Wire

Italy . 853 parts In-Stock

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Component Stockers USA

USA . 291 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,251 parts In-Stock

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SupplyDigital Components

Austria . 7,303 parts In-Stock

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Corphita

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Corohmni

South Africa . 480 parts In-Stock

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Overview

Discover the NRVTS560ETFSTWG by Onsemi, a high-quality rectifier diode that offers unmatched efficiency for a wide range of applications. With a maximum output current of 5A and a minimum breakdown voltage of 60V, this Schottky diode delivers superior performance and reliability. Whether you're looking to enhance power management systems or improve overall circuit efficiency, this diode is the perfect solution. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the NRVTS560ETFSTWG brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Reverse Current: 50 uA

Low reverse current ensures energy efficiency and minimal power loss in the circuit.

Minimum Operating Temperature: -55 °C

Wide operating temperature range makes it suitable for use in harsh environments or extreme conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this product ideal for rectification applications.

Maximum Output Current: 5 A

High output current capability allows for handling larger loads, making it versatile for a variety of applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speed compared to standard diodes, leading to improved efficiency and performance.

Maximum Non Repetitive Peak Forward Current: 120 A

High peak forward current handling capability ensures reliability and safety under transient conditions.

Technical Specifications

Diodes & Rectifiers NRVTS560ETFSTWG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Minimum Breakdown Voltage:

60 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JESD-30 Code:

S-PDSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

8

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS560ETFSTWG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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