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M29DW128F60ZA1F

STMicroelectronics

M29DW128F60ZA1F by STMicroelectronics

M29DW128F60ZA1F from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max access time of 60 ns and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,226 parts In-Stock

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6,226

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Digiode

USA . 4,596 parts In-Stock

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4,596

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Anansix

USA . 1,199 parts In-Stock

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1,199

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 243 parts In-Stock

1+ parts

$4.995

100+ parts

-

1k+ parts

$4.495

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243

$4.995

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$4.495

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MKK Technologies

India . 1,929 parts In-Stock

1+ parts

$9.392

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1,929

$9.392

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DigiPath Technology Company

USA . 1,929 parts In-Stock

1+ parts

$9.392

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1,929

$9.392

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Corphita

USA . 5,665 parts In-Stock

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5,665

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Parana Technologies

USA . 1,796 parts In-Stock

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$5.972

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1,796

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$5.972

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Overview

Unlock unparalleled performance with the M29DW128F60ZA1F flash memory from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This high-quality, reliable device offers exceptional speed and efficiency, making it perfect for applications ranging from consumer electronics to automotive systems. With its low power consumption and robust design, the M29DW128F60ZA1F ensures optimal functionality while delivering unmatched value and durability for your innovative projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable materials ensure longevity and reliability in various electronic applications.

Surface Mount: YES

Supports modern manufacturing processes, allowing for compact designs and higher assembly efficiency.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy integration into different layouts and standard PCB designs.

Operating Mode: ASYNCHRONOUS

Enables faster read operations, enhancing performance for applications requiring quick data access.

Nominal Supply Voltage / Vsup: 3 V

Standard supply voltage suitable for a wide range of electronic devices, ensuring compatibility.

Power Supplies (V): 3/3.3 V

Versatile voltage options allow for flexible use in multiple applications with different power requirements.

No. of Terminals: 64

High number of terminals allows for increased connectivity and flexibility in circuit design.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Thin profile aids in reducing overall device heights, contributing to space-saving designs.

Alternate Memory Width: 8

Provides additional flexibility in data processing, optimizing performance for specific applications.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Organization: 8MX16

Efficient memory organization allows for effective data management and faster read/write cycles.

Minimum Operating Temperature: 0 °C

Specify low temperature capabilities to support operation in diverse environments.

No. of Sectors/Size: 16,254

Many sectors available, allowing for flexible data storage solutions tailored to specific applications.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and can enhance soldering quality.

Maximum Seated Height: 1.2 mm

Low profile design allows for compact applications where space is limited.

Width: 10 mm

Compact width aids in integration into smaller devices, promoting innovative designs.

Minimum Supply Voltage (Vsup): 2.7 V

Allows for operation in lower power scenarios, enhancing energy efficiency of devices.

Page Size (words): 8/16

Flexible page size offers optimization for different data storage and retrieval needs.

Maximum Time At Peak Reflow Temperature (s): 40

Provides robust thermal performance during manufacturing, minimizing the risk of component damage.

Peak Reflow Temperature °C: 260

High temperature tolerance ensures compatibility with various soldering processes.

Type: NOR TYPE

NOR type architecture offers fast random access and efficient read operations crucial for embedded systems.

Common Flash Interface: YES

Standardized interface simplifies integration with existing systems and upgrades.

Length: 13 mm

Compact length is ideal for space-constrained applications.

Programming Voltage (V): 3

Consistent programming voltage offers reliability and predictable performance during operation.

Temperature Grade: COMMERCIAL

Commercial grade components are suitable for a wide array of consumer and industrial applications.

Technology: CMOS

CMOS technology enables low power consumption, enhancing battery life in portable devices.

Parallel or Serial: PARALLEL

Parallel access supports high-speed data transfer, making it suitable for performance-critical applications.

Terminal Form: BALL

Ball terminal form allows for more reliable solder connections and improved electrical performance.

Sector Size (Words): 8K,64K

Flexible sector sizes cater to diverse application requirements, optimizing storage management.

Maximum Supply Current: 20 mA

Low supply current reduces power consumption and increases energy efficiency in devices.

No. of Words: 8388608 words

Large memory capacity supports complex applications and extensive data storage requirements.

Toggle Bit: YES

Toggle bit feature enhances reliability in data integrity checks, crucial for error detection.

Memory Width: 16

16-bit memory width provides higher data throughput, improving overall system performance.

Terminal Pitch: 1 mm

1 mm terminal pitch aids in finer pitch manufacturing processes, allowing high-density designs.

No. of Words Code: 8M

8M words signify substantial memory limits, catering to data-intensive applications.

Command User Interface: YES

User-friendly interface simplifies memory management and integration into various systems.

Ready or Busy: YES

Ready or busy indication enhances control over read and write operations, ensuring process integrity.

Maximum Supply Voltage (Vsup): 3.6 V

Allows flexibility in power supply options while maintaining safe operational limits.

Boot Block: BOTTOM/TOP

Configurable boot block positions provide flexibility for system designs requiring varied initialization sequences.

Memory Density: 134217728 bit

High memory density enables storage of large amounts of data, enhancing application capabilities.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, ensuring data retention after power loss.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances energy efficiency, perfect for battery-operated devices.

Maximum Access Time: 60 ns

Fast access time ensures swift data retrieval, significantly improving application responsiveness.

Data Polling: YES

Data polling capability allows for efficient monitoring of memory status, enhancing control during operations.

Technical Specifications

Flash Memory M29DW128F60ZA1F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA1F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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