Loading...

M29DW128F60ZA6E

STMicroelectronics

M29DW128F60ZA6E by STMicroelectronics

M29DW128F60ZA6E from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max time of 60ns and supports industrial temp ranges (-40 °C to 85 °C). Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 6,817 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,817

-

-

-

-

Vyrian

USA . 4,341 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,341

-

-

-

-

Anansix

USA . 1,834 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,834

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,404 parts In-Stock

1+ parts

$4.522

100+ parts

-

1k+ parts

$4.070

10k+ parts

-

1,404

$4.522

-

$4.070

-

MKK Technologies

India . 986 parts In-Stock

1+ parts

$8.503

100+ parts

-

1k+ parts

-

10k+ parts

-

986

$8.503

-

-

-

DigiPath Technology Company

USA . 986 parts In-Stock

1+ parts

$8.503

100+ parts

-

1k+ parts

-

10k+ parts

-

986

$8.503

-

-

-

Component Stockers USA

USA . 202 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

202

$99.990

-

-

-

Parana Technologies

USA . 2,006 parts In-Stock

1+ parts

-

100+ parts

$5.406

1k+ parts

-

10k+ parts

-

2,006

-

$5.406

-

-

Corphita

USA . 1,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,767

-

-

-

-

Microchip USA

USA . 369 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

369

-

-

-

-

Kepictronics

USA . 59 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

59

-

-

-

-

Overview

Unlock unparalleled performance and reliability with the M29DW128F60ZA6E from STMicroelectronics, a leader in innovative semiconductor solutions. This premium Flash Memory is designed for demanding applications, ensuring swift data access and robust endurance even in extreme environments. Benefit from its compact design, operational flexibility, and superior quality that enhances your technology projects, driving efficiency and reliability at every turn. Experience the difference with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material provides enhanced protection and longevity for the memory device.

Surface Mount: YES

Designed for efficient assembly on printed circuit boards, saving space and allowing for automated manufacturing.

Package Shape: RECTANGULAR

The rectangular design optimizes space within electronic devices, facilitating compact layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and processing, improving overall performance.

Nominal Supply Voltage / Vsup: 3 V

A standard voltage level that ensures compatibility with various low-power electronic devices.

Power Supplies: 3/3.3 V

Compatible with common voltage levels in modern electronics, offering flexibility in design.

No. of Terminals: 64

Multiple terminals enable high data throughput and efficient connections in complex applications.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Thin profile design allows for space-saving installations, ideal for compact electronic devices.

Alternate Memory Width: 8

8-bit width facilitates efficient data processing in certain applications while maintaining performance.

Maximum Operating Temperature: 85 °C

High-temperature tolerance ensures reliable operation in demanding industrial environments.

Organization: 8MX16

Efficient organization maximizes memory capacity and optimizes performance for various applications.

Minimum Operating Temperature: -40 °C

Extensive temperature range ensures functionality in extreme conditions, enhancing versatility.

No. of Sectors/Size: 16,254

Large number of sectors allows for flexible memory management and efficient data handling.

Terminal Position: BOTTOM

Bottom-terminal configuration simplifies board layout and optimizes connection integrity.

Maximum Seated Height: 1.2 mm

Minimal height aids in low-profile designs, important for compact devices.

Width: 10 mm

Compact width enables integration into space-constrained applications without sacrificing performance.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum voltage requirement ensures compatibility with a wide range of power supplies.

Page Size (words): 8/16

Flexible page size options enhance read and write performance tailored to specific applications.

Maximum Time At Peak Reflow Temperature: 40 s

Adequate reflow time ensures proper soldering without damaging the memory chip.

Peak Reflow Temperature: 260 °C

High tolerance to peak temperatures protects the device during assembly and manufacturing.

Type: NOR TYPE

NOR memory technology enables high-speed random access and is ideal for code storage applications.

Common Flash Interface: YES

Standard interface simplifies integration into diverse systems, promoting ease of use.

Length: 13 mm

Compact length suitable for various applications, contributing to the design flexibility.

Programming Voltage: 3 V

Consistent programming voltage enhances reliability and accuracy in data handling.

Temperature Grade: INDUSTRIAL

Industrial grade ensures performance under rigorous environmental conditions, suitable for commercial use.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making it energy efficient.

Parallel or Serial: PARALLEL

Parallel operation provides faster data transfer rates compared to serial alternatives.

Terminal Form: BALL

Ball terminal design allows for efficient heat dissipation and enhanced mechanical stability.

Sector Size (Words): 8K, 64K

Flexible sector size aids in efficient memory management, optimizing performance for various applications.

Maximum Supply Current: 20 mA

Low maximum supply current allows energy-efficient designs without compromising performance.

No. of Words: 8388608 words

High memory capacity supports complex applications and ample data storage in embedded systems.

Toggle Bit: YES

Toggle bit feature enhances status monitoring during read and write operations, improving reliability.

Memory Width: 16

16-bit memory width enables faster data processing and better performance in high-demand applications.

Terminal Pitch: 1 mm

1 mm terminal pitch allows for compact layout, essential for modern miniaturized devices.

No. of Words Code: 8M

High word count indicates ample storage capability for a variety of applications and uses.

Command User Interface: YES

User-friendly interface simplifies programming and enhances user experience with memory operations.

Ready or Busy: YES

Status indication improves user control over memory operations, enhancing overall workflow.

Maximum Supply Voltage (Vsup): 3.6 V

Higher supply voltage tolerance provides flexibility in various power supply configurations.

Boot Block: BOTTOM/TOP

Flexible boot block options facilitate faster system boot times and improve application responsiveness.

Memory Density: 134217728 bit

High memory density allows for efficient data storage and retrieval, supporting complex applications.

Memory IC Type: FLASH

Flash memory technology is known for its durability and reusability, making it ideal for numerous applications.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current contributes to energy efficiency in battery-powered devices.

Maximum Access Time: 60 ns

Fast access time ensures quick data retrieval and enhances overall system performance.

Data Polling: YES

Data polling capability offers real-time status updates, improving efficiency during memory operations.

Technical Specifications

Flash Memory M29DW128F60ZA6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20